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Ordering number : EN8949
MCH6541
SANYO Semiconductors
DATA SHEET
MCH6541
Applications
*
PNP / NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuit Applications
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.
Features
* *
Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg When mounted on ceramic substrate (600mm20.8mm) 1unit When mounted on ceramic substrate (600mm20.8mm) Conditions Ratings (--30)40 (--)30 (--)5 (--)700 (--)3 0.5 0.55 150 --55 to +150 Unit V V V mA A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0A VEB=(-)4V, IC=0A VCE=(--)2V, IC=(-10)50mA VCE=(--)2V, IC=(--)50mA VCB=(--)10V, f=1MHz (200)300 (520)540 (4.7)3.3 Ratings min typ max (-)100 (-)100 (500)800 MHz pF Unit nA nA
Marking : EP
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22008EA TI IM TC-00001087 No.8949-1/5
MCH6541
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)200mA, IB=(--)10mA IC=(--)200mA, IB=(--)10mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= IE=(-)10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--30)40 (--)30 (--)5 35 (125)255 (25)40 Ratings min typ (--110)85 (--)0.9 max (--220)190 (-)1.2 Unit mV V V V V ns ns ns
Package Dimensions
unit : mm (typ) 7022A-012
Electrical Connection
6 0.25
2.0 0.15
5
4
6
5
4
0 to 0.02
1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR)
Top view
2.1 1.6
0.25
1
0.65
2
3
0.3
1
2
3
0.85
1
2
3
1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) SANYO : MCPH6
0.07
6
5
4
Switching Time Test Circuit
IB1 OUTPUT IB2 VR 50 + 220F VBE= --5V + 470F VCC=12V RB
PW=20s D.C.1% INPUT
RL
IC=20IB1= --20IB2=300mA For PNP, the polarity is reversed.
No.8949-2/5
MCH6541
-mA 40mA
--700
IC -- VCE
A A 0m --25m --3
[PNP]
A --20m A --15m A --10m mA --7 --5mA
--3mA --2mA
700
IC -- VCE
30m 20m A A 15m A
A 10m
[NPN]
5mA
7mA
--600
600
Collector Current, IC -- mA
Collector Current, IC -- mA
--50
--500
500
3mA
2mA
1mA
--400
400
--300
300
--1mA
--200
50m A
200
400A 200A
--500A
--100 0 0
100
IB=0A
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
0 0
IB=0A
100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV
--800 --700
IT05049
IC -- VBE
Collector-to-Emitter Voltage, VCE -- mV
800 700
IT05082
[PNP]
IC -- VBE
[NPN] VCE=2V
VCE= --2V
Collector Current, IC -- mA Collector Current, IC -- mA
--600 --500 --400
600 500 400 300 200 100 0
Ta=7 5C 25C --25C
--300 --200 --100 0 0 --0.2 --0.4 --0.6
--0.8
--1.0
--1.2 IT05050
0
0.2
0.4
0.6
Ta=7 5
0.8
--25C
C 25C
1.0 IT05083
Base-to-Emitter Voltage, VBE -- V
1000 7 5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
[PNP]
hFE -- IC
Ta=75C
25C
[NPN] VCE=2V
VCE= --2V
Ta=75C 25C
--25C
7
DC Current Gain, hFE
DC Current Gain, hFE
5
3 2
--25C
3
100 7 5 3 --1.0
2
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
--1000
5 7--1000 IT05051
100 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05084
Collector Current, IC -- mA
1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3 5 7 100 2 3
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
7 5 3 2
[PNP] IC / IB=20
VCE(sat) -- IC
[NPN] IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
C 75
--100 7 5 3 2
2 Ta=
5C
5C --2
C 75 Ta= 5C --2
C 25
2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05054
--10 --1.0
5 7 1000 IT05085
Collector Current, IC -- mA
Collector Current, IC -- mA
No.8949-3/5
MCH6541
3 2
VCE(sat) -- IC
[PNP] IC / IB=50
1000 7
VCE(sat) -- IC
[NPN] IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
5 3 2
--1000 7 5 3 2 --100 7 5 3 2 --10 --1.0
100 7 5 3 2
C 75
7 Ta=
5C
5C --2
C 25
5C =2 Ta 5C --2
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
--10 7
5 7--1000 IT05055
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05086
Collector Current, IC -- mA
10 7
VBE(sat) -- IC
[PNP] IC / IB=20
VBE(sat) -- IC
[NPN] IC / IB=20
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
5 3 2
5 3 2
--1.0 7 5 3 2
Ta= --25C
75C
25C
1.0 7 5 3 2
Ta= --25C
25C
75C
--0.1 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
10
5 7--1000 IT05056
0.1 1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
10
5 7 1000 IT05087
Cob -- VCB
[PNP] f=1MHz
Cob -- VCB
[NPN] f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
2 3 5 2 3 5 IT05053
7
7
5
5
3
3
2
2
0.1 --1.0
7
--10
1.0 1.0
2
3
5
7
10
2
3
5 IT05088
Collector-to-Base Voltage, VCB -- V
1000
f T -- IC
Collector-to-Base Voltage, VCB -- V
1000
[PNP]
fT -- IC
[NPN] VCE=10V
VCE= --10V
Gain-Bandwidth Product, f T -- MHz
Gain-Bandwidth Product, fT -- MHz
7
7
5
5
3
3
2
2
100 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000 IT05052
100 1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
5 7 1000 IT05089
No.8949-4/5
MCH6541
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 2 3 5 7 0.1 0.1 2 3 5 7 2 3 5 7 10 IT06793
Ron -- IB
f=1MHz 1k IN 1k
[PNP]
10
Ron -- IB
f=1MHz 1k IN 1k IB
[NPN] OUT
OUT
7 5
ON Resistance, Ron --
ON Resistance, Ron --
--10 IT06403
IB
3 2
1.0 7 5 3 2
--1.0
1.0
Base Current, IB -- mA
0.6
PD -- Ta
Base Current, IB -- mA
[PNP/NPN]
Allowable Power Dissipation, PD -- W
0.55 0.5
When mounted on ceramic substrate (600mm20.8mm)
0.4
To t
1u
al
t
0.3
di
ss
ip
ni
at
io
n
0.2
0.1
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT10744
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice.
PS No.8949-5/5

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