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MCT5210/MCT5211
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current, With Base Connection
FEATURES
A C NC
i179004
1 2 3
6B 5C 4E
* Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA * High isolation voltage, 5300 VRMS * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
The MCT521/5211 are optocouplers with a high efficiency AIGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a six pin DIP package. Isolation test voltage is 5300 VRMS. Because these parts have guaranteed CTRs at 1 mA and 3 mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection.
AGENCY APPROVALS
* UL1577, file no. E52744 system code H or J, double protection * BSI IEC 60950; IEC 60065 * DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 * CSA 93751
ORDER INFORMATION
PART MCT5210 MCT5211 MCT5211-X007 MCT5211-X009 Note For additional information on the available options refer to option information. REMARKS CTR > 70 %, DIP-6 CTR > 110 %, DIP-6 CTR > 110 %, SMD-6 (option 7) CTR > 110 %, SMD-6 (option 9)
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Peak reverse voltage Forward continuos current Power dissipation Derate linearly from 25 C OUTPUT Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown voltage Power dissipation Derate linearly from 25 C BVCEO BVECO BVCBO Pdiss 30 7.0 70 200 2.6 V V V mW mW/C VR IF Pdiss 6.0 40 75 1.0 V mA mW mW/C TEST CONDITION SYMBOL VALUE UNIT
Document Number: 83657 Rev. 1.5, 14-Jan-08
For technical questions, please contact: optocoupler.answers@vishay.com
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MCT5210/MCT5211
Vishay Semiconductors Optocoupler, Phototransistor Output,
Low Input Current, With Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER COUPLER Isolation test voltage Total package dissipation (LED and detector) Derate linearly from 25 C Creepage distance Clearance distance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Operating temperature Storage temperature VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C CTI RIO RIO Tamp Tstg VISO Ptot 5300 260 3.5 7 7 175 1012 1011 - 55 to + 100 - 55 to + 150 C C VRMS mW mW/C mm mm TEST CONDITION SYMBOL VALUE UNIT
Note Tamb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER INPUT Forward voltage Reverse voltage OUTPUT DC forward current gain Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown voltage Collector emitter leakage voltage COUPLER Saturation voltage IF = 3.0 mA, IC = 1.8 mA IF = 1.6 mA, IC = 1.6 mA MCT5210 MCT5211 VCEsat VCEsat 0.25 0.25 0.4 0.4 V V VCE = 5.0 V, IC = 100 A IC = 100 A IE = 100 A IE = 10 A VCE = 10 V hFE BVCEO BVECO BVCBO ICEO 100 30 7.0 70 5.0 100 200 V V V nA IF = 5.0 mA IR = 10 A VF VR 6.0 1.2 1.5 V V TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Note Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER Current transfer ratio (collector emitter saturated) TEST CONDITION VCE = 0.4 V, IF = 3.0 mA VCE = 0.4 V, IF = 1.6 mA VCE = 0.4 V, IF = 1.0 mA VCE = 5.0 mA, IF = 3.0 mA Current transfer ratio VCE = 5.0 mA, IF = 1.6 mA VCE = 5.0 mA, IF = 1.0 mA Current transfer ratio (collector base) VCE = 4.3 V, IF = 3.0 mA VCE = 4.3 V, IF = 1.6 mA VCE = 4.3 V, IF = 1.0 mA www.vishay.com 2 PART MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 SYMBOL CTRCEsat CTRCEsat CTRCEsat CTR CTR CTR CTRCB CTRCB CTRCB MIN. 60 100 75 70 150 110 0.2 0.3 0.25 TYP. 120 200 150 150 300 225 0.4 0.6 0.5 MAX. UNIT % % % % % % % % % Document Number: 83657 Rev. 1.5, 14-Jan-08
For technical questions, please contact: optocoupler.answers@vishay.com
MCT5210/MCT5211
Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, With Base Connection
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION RL = 330 , IF = 3.0 mA, VCC = 5.0 V Propagation delay high to low RL = 750 , IF = 1.6 mA, VCC = 5.0 V RL = 1.5 k , IF = 1.0 mA, VCC = 5.0 V RL = 330 , IF = 3.0 mA, VCC = 5.0 V Propagation delay low to high RL = 750 , IF = 1.6 mA, VCC = 5.0 V RL = 1.5 k , IF = 1.0 mA, VCC = 5.0 V PART MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 SYMBOL tPHL tPHL tPHL tPLH tPLH tPLH MIN. TYP. 10 20 40 10 20 40 MAX. UNIT s s s s s s
V CC = 5 V
IF
Input
RL VOUT tD VO tR t PL H V TH = 1.5 V
imct5210_06
t PHL
imct5210_03
tS
tF
Fig. 1 - Switching Schematic Fig. 2 - Switching Waveform
TYPICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified
35 30 IF - LED Current - mA 25 20 15 10 5 0 1.0
imct5210_01
100
IF - LED Current - mA 1.1 1.2 1.32 VF - LED Forward Voltage - V 1.4
imct5210_02
10
1
.1 1.0
1.2 1.3 1.1 VF - LED Forward Voltage - V
1.4
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - LED Forward Current vs. Forward Voltage
Document Number: 83657 Rev. 1.5, 14-Jan-08
For technical questions, please contact: optocoupler.answers@vishay.com
www.vishay.com 3
MCT5210/MCT5211
Vishay Semiconductors Optocoupler, Phototransistor Output,
Low Input Current, With Base Connection
300 250 Icb - Photocurrent - A 200 150 100 50 0 CTRcb - Collector Base - CTR - % 0 5 10 15 20 25 30 IF - LED Current - mA 35 40
1.0 0.8 0.6 0.4 0.2 0.0
0.1
1 10 IF - LED Current - mA
100
imct5210_04
imct5210_08
Fig. 5 - Collector Base Photocurrent vs. LED Current
Fig. 8 - Collector Base CTR vs. LED Current
1000
700 600
Icb - Photocurrent - A
100 Ratio - %
500 Vce 400 10 V 300 200 5V 2V 1V 0.4 V .1
imct5210_09
10
1
.1 .1
imct5210_05
1 10 IF - LED Current - mA
100
100 1 10 IF - LED Current - mA 100
Fig. 6 - Photocurrent vs. LED Current
Fig. 9 - CTR vs. LED Current
CTRcb - Collector Base - CTR - %
1.0 0.8 0.6 0.4 0.2 0.0 Ice - Collector Current - mA
80 70 60 50 40 30 20 10 0 0
imct5210_10
Vce 10 V 5V
2V 1V 0.4 V
0
5
10 15 20 25 IF - LED Current - mA
30
35
5
imct5210_07
10 15 IF - LED Current - mA
20
25
Fig. 7 - Collector Base CTR vs. LED Current
Fig. 10 - Collector Current vs. LED Current
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For technical questions, please contact: optocoupler.answers@vishay.com
Document Number: 83657 Rev. 1.5, 14-Jan-08
MCT5210/MCT5211
Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, With Base Connection
100 Ice - Collector Current - mA 100
Vce = 0.4 V
IF - LED Current - mA
10
10
500 400
1
1
300 200
.1 .1
imct5210_11
1 10 IF - LED Current - mA
100
.1 .1
imct5210_14
1 10 100 Icb - Photocurrent - A
100 1000
Fig. 11 - Collector Current vs. LED Current
Fig. 14 - Transfer Curve
800 HFE - DC Current Gain - (Ice/Ib) 700 Propagation Delay - s 600 500 400 300 200 100 .1
imct5210_12
70 60 tPLH 50 40 30 20 10 10 5
imct5210_15
IF = 1 mA RL= 10 K Vth = 1.5 V Vce = 5 V
Vce 10 V 5V 2V 1V 0.4 V 1 10 100 Ib - Base Current - A 1000
tPHL
10 6 Rbe - Base Emitter Resistor -
10 7
Fig. 12 - Transistor Current Gain vs. Base Current
Fig. 15 - Propagation Delay vs. Base Emitter Resistor
100 Vce =10 V, IF - LED Current - mA
800
50 40 HFE - Transistor Gain
10 Ice = Icb x HFE
700
Propagation Delay - s
tPLH 30 20
IF = 1.6 mA RL= 4.7 K Vth = 1.5 V Vce = 5 V
1
600
10 0 10 5
tPHL 10 6 Rbe - Base Emitter Resistor 10 7
.1 .1
imct5210_13
1
10
100
500 1000
imct5210_16
Icb - Photocurrent - A
Fig. 13 - Transfer Curve
Fig. 16 - Propagation Delay vs. Base Emitter Resistor
Document Number: 83657 Rev. 1.5, 14-Jan-08
For technical questions, please contact: optocoupler.answers@vishay.com
www.vishay.com 5
HFE - Transistor Gain
10 V 5V 2V 1V 0.4 V Vce
700 600 Ice = Icb x HFE
MCT5210/MCT5211
Vishay Semiconductors Optocoupler, Phototransistor Output,
Low Input Current, With Base Connection
40 35 Probagation Delay - s 30 tPLH 25 20 15 10 tPHL 5 0 10 4
imct5210_17
IF = 3 mA RL = 3 K Vth = 1.5 V Vce = 5 V
10 5 10 6 Rbe - Base Emitter Resistor -
10 7
Fig. 17 - Propagation Delay vs. Base Emitter Resistor
PACKAGE DIMENSIONS in Inches (millimeters)
3 2 1 Pin one ID
0.248 (6.30) 0.256 (6.50)
4
5
6
ISO method A
0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.048 (0.45) 0.300 (7.62) typ.
0.022 (0.55) 0.130 (3.30) 0.150 (3.81)
4 typ. 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.022 (0.55) 0.100 (2.54) typ.
i178004
18 0.114 (2.90) 0.130 (3.0) 3 to 9 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81)
0.035 (0.90)
Option 7
0.300 (7.62) typ.
Option 9
0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref.
0.028 (0.7) min.
0.180 (4.6) 0.160 (4.1)
0.315 (8.0) min.
0.0040 (0.102) 0.0098 (0.249) 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min.
0.012 (0.30) typ.
0.331 (8.4) min. 0.406 (10.3) max.
15 max.
18494
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For technical questions, please contact: optocoupler.answers@vishay.com
Document Number: 83657 Rev. 1.5, 14-Jan-08
MCT5210/MCT5211
Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, With Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83657 Rev. 1.5, 14-Jan-08
For technical questions, please contact: optocoupler.answers@vishay.com
www.vishay.com 7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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