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| SI5908DC New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) () 0.040 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V 0.052 @ VGS = 1.8 V ID (A) 5.9 5.6 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS D Load Switch D PA Switch D Battery Switch D1 D2 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 Marking Code CC XXX Lot Traceability and Date Code G1 G2 Bottom View Part # Code S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: SI5908DC-T1--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 5 secs Steady State 20 8 Unit V 5.9 ID IDM IS PD TJ, Tstg 1.8 2.1 1.1 --55 to 150 260 4.2 20 4.4 3.1 A 0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73074 S-41641--Rev. A, 06-Sep-04 www.vishay.com 1 SI5908DC Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.4 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.1 A VGS = 1.8 V, ID = 1.9 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 4.4 A IS = 0.9 A, VGS = 0 V 20 0.032 0.036 0.042 22 0.8 1.2 0.040 0.045 0.052 S V 0.4 1.0 100 1 5 mA A V nA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms N-Channel VDD = 10 V RL = 10 V, ID 1 A, VGEN = 4.5 V, Rg = 6 N-Channel N Ch l VDS = 10 V, VGS = 4.5 V, ID = 4.4 A 5 0.85 1 1.9 20 36 30 12 45 30 55 45 20 90 ns 7.5 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%, b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 16 I D -- Drain Current (A) I D -- Drain Current (A) 16 20 Transfer Characteristics TC = --55_C 25_C 12 125_C 8 12 1.5 V 8 4 1V 0 0 1 2 3 4 5 4 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 73074 S-41641--Rev. A, 06-Sep-04 SI5908DC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) -- On-Resistance ( ) 800 700 C -- Capacitance (pF) 0.08 600 Ciss 500 400 300 200 0.02 VGS = 4.5 V 100 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 Coss Vishay Siliconix Capacitance 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 5 V GS -- Gate-to-Source Voltage (V) VDS = 10 V ID = 4.4 A 4 rDS(on) -- On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.4 A 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) 10 r DS(on) -- On-Resistance ( ) 0.08 ID = 4.4 A 0.06 ID = 2 A 0.04 TJ = 150_C TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 73074 S-41641--Rev. A, 06-Sep-04 www.vishay.com 3 SI5908DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 50 Single Pulse Power 0.1 V GS(th) Variance (V) ID = 250 mA --0.0 Power (W) 40 30 --0.1 20 --0.2 10 --0.3 --0.4 --50 --25 0 25 50 75 100 125 150 0 10 --4 10 --3 10 --2 10 --1 Time (sec) 1 10 100 600 TJ -- Temperature (_C) Safe Operating Area 100 IDM Limited rDS(on) Limited 10 I D -- Drain Current (A) P(t) = 0.0001 1 ID(on) Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc BVDSS Limited 0.1 TA = 25_C Single Pulse 1000 0.01 0.1 1 10 100 VDS -- Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73074 S-41641--Rev. A, 06-Sep-04 SI5908DC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73074 S-41641--Rev. A, 06-Sep-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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