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| IRF9Z22, SIHF9Z22 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 26 6.2 8.6 Single S FEATURES - 50 0.33 * * * * * * * P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 G DESCRIPTION The Power MOSFET technology is the key to Vishay's advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel Power MOSFET's are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel Power MOSFET's such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel Power MOSFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. S G D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9Z22PbF SIHF9Z22-E3 IRF9Z22 SIHF9Z22 ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Drain-Gate Voltage (RGS = 20 K) Continuous Drain Current VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS VGDR ID LIMIT - 50 20 - 50 - 8.9 - 5.6 - 36 0.32 - 36 - 2.2 40 - 55 to + 150 300d UNIT V A W/C A A W C IDM Pulsed Drain Currenta Linear Derating Factor Inductive Current, Clamped L = 100 H ILM Unclamped Inductive Current (Avalanche Current) IL PD Maximum Power Dissipation TC = 25 C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 C, L =100 H, RG = 25 c. ISD - 6.7 A, dI/dt 90 A/s, VDD VDS, TJ 175 C. d. 0.063" (1.6 mm) from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRF9Z22, SIHF9Z22 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 1.0 MAX. 80 3.1 C/W UNIT SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VGS = 20 V VDS = max. rating, VGS = 0 V VDS = max. rating x 0,8, VGS = 0 V, TJ =125C VGS = - 10 V ID = - 5.6 Ab Ab VDS = 2 x VGS, IDS = - 5.6 - 50 - 2.0 2.3 0.28 3.5 - 4.0 500 - 250 - 1000 0.33 - V V nA A S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 - 480 320 58 17 4.1 5.7 8.2 57 12 25 4.5 7.5 26 6.2 8.6 12 86 18 38 nH ns nC pF VGS = - 10 V ID = - 9.7 A, VDS = - 0.8 max. rating. see fig. 17 - VDD = - 25 V, ID = - 9.7 A, RG = 18 , RD = 2.4 , see fig. 16 (MOSFET switching times are essentially independent of operating temperature) Between lead, 6 mm (0.25") from package and center of die contact D - G S 56 0.17 110 0.34 - 9.7 A - 39 - 6.3 280 0.85 V ns C G S TJ = 25 C, IS = - 9.7 A, VGS = 0 Vb TJ = 25 C, IF = - 9.7 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 IRF9Z22, SIHF9Z22 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Saturation Characteristics Fig. 2 - Typical Transfer Characteristics Fig. 4 - Maximum Safe Operating Area Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 3 IRF9Z22, SIHF9Z22 Vishay Siliconix Fig. 5 - Typical Transconductance vs. Drain Current Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Breakdown Voltage vs. Temperature Fig. 8 - Normalized On-Resistance vs. Temperature www.vishay.com 4 Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 IRF9Z22, SIHF9Z22 Vishay Siliconix Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 12 - Maximum Drain Current vs. Case Temperature Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 5 IRF9Z22, SIHF9Z22 Vishay Siliconix Fig. 13a - Clamped Inductive Test Circuit Fig. 13b - Clamped Inductive Waveforms Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Fig. 15a - Unclamped Inductive Test Circuit Fig. 15b - Unclamped Inductive Load Test Waveforms www.vishay.com 6 Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 IRF9Z22, SIHF9Z22 Vishay Siliconix Fig. 16 - Switching Time Test Circuit Fig. 17 - Gate Charge Test Circuit Fig. 18 - Typical Time to Accumulated 1 % Gate Failure Fig. 19 - Typical High Temperature Reverse Bias (HTRB) Failure Rate Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 7 IRF9Z22, SIHF9Z22 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + P.W. Period Ripple 5 % D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver Driver gate drive D= D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current Body diode forward drop * VGS = - 5 V for logic level and - 3 V drive devices Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91350. www.vishay.com 8 + + * dV/dt controlled by RG * ISD controlled by duty factor "D" * D.U.T. - device under test + - VDD P.W. Period VGS = - 10 V* VDD ISD Fig. 20 - For P-Channel Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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