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PD-97288 RevA
Integrated Power Hybrid IC for Low Voltage Motor Applications
Description
IRAM136-3063B Series 30A, 600V
with Internal Shunt Resistor
International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as well as for light industrial application. IR's technology offers an extremely compact, high performance AC motor driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A builtin temperature monitor and over-current and over-temperature protections, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
Features
* * * * * * * * * * * Integrated Gate Drivers Temperature Monitor and Protection Overcurrent shutdown Low VCE(on) Advance Planar Super Rugged Technology Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power up to 3.3kW / 85~253 Vdc Fully Isolated Package, Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter VCES / VRRM V+ IO @ TC=25C IO @ TC=100C IO FPWM PD VISO TJ (IGBT & Diode & IC) TC TSTG T Description IGBT/Diode Blocking Voltage Positive Bus Input Voltage Maximum Output Current RMS Phase Current (Note 1) Pulsed RMS Phase Current (Note 2) PWM Carrier Frequency Power dissipation per IGBT @ TC =25C Isolation Voltage (1min) Maximum Operating Junction Temperature Operating Case Temperature Range Storage Temperature Range Mounting torque Range (M4 screw) Value 600 450 30 15 50 20 73 2000 +150 -20 to +100 -40 to +125 0.7 to 1.17 Nm C kHz W VRMS A Units V
Note 1: Sinusoidal Modulation at V+=400V, TJ=150C, FPWM=6kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25C; FPWM=6kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
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IRAM136-3063B
Internal Electrical Schematic - IRAM136-3063B
V+ (10)
RS V- (12) R1 VB1 (1) U, VS1 (2) VB2 (4) V, VS2 (5) VB3 (7) W, VS3 (8)
C1
R3
R5
C2
C3
R2
23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 LO2 15 24 HO1 25 VB1 1 VCC
R15
R4
Driver IC
HIN1 (13) HIN2 (14) HIN3 (15) LIN1 (16) LIN2 (17) LIN3 (18) FAULT(19) ISENSE (20) R11 VDD (21)
C4 C7 THERMISTOR
2 HIN1 3 HIN2 4 HIN3 5 LIN1
LO3 14
R6
LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13
R9
POSISTOR
R8
R12 R13 R14 C5 C6
R7
VSS (22)
2
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IRAM136-3063B
Absolute Maximum Ratings (Continued)
Symbol IBDF PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Diode Peak Forward Current Bootstrap Resistor Peak Power (Single Pulse) High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, ITrip Min ----VB1,2,3 - 25 -0.3 -0.3 Max 4.5 25.0 VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions A W V V V tP= 10ms, TJ = 150C, TC=100C tP=100s, TC =100C
VIN
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25C
Symbol V(BR)CES V(BR)CES / T VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Current Protection Threshold (positive going) Min 600 ---------------------44 Typ --0.5 1.90 2.10 5 80 1.6 1.5 ---22 ----Max ----2.7 2.8 150 --2.5 2.2 1.25 1.10 --5 58 % A V V A Units Conditions V V/C V VIN=5V, IC=500A VIN=5V, IC=1.0mA (25C - 150C) IC=15A, VCC=15V IC=15A, VCC=15V, TJ=125C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=125C IC=15A IC=15A, TJ=125C IF=1A IF=1A, TJ=125C TJ=25C TJ=25C tON > 175s
ICES
VFM
VBDFM RBR RBR/RBR IBUS_TRIP
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IRAM136-3063B
Inverter Section Switching Characteristics @ TJ= 25C
Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Reverse Bias Safe Operating Area Min ----------------------Typ 550 240 790 65 50 830 400 1230 120 140 72 Max 870 300 1170 125 --1180 550 1730 205 --108 ns nC
+
Units Conditions IC=15A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=15A, V+=400V VCC=15V, L=2mH, TJ=125C Energy losses include "tail" and diode reverse recovery See CT1 IC=20A, V =400V, VGE=15V TJ=150C, IC=60A, VP=600V V+= 480V VCC=+15V to 0V TJ=150C, VP=600V,
J
ns
J
FULL SQUARE
See CT3
SCSOA
Short Circuit Safe Operating Area
10
---
---
s
V+= 500V, VCC=+15V to 0V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential Symbol VB1,2,3 VS1,2,3 VCC VT/ITRIP VIN HIN Deadtime Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage T/ITRIP input voltage Logic input voltage LIN, HIN High side PWM pulse width External dead time between HIN and LIN Min VS+12 Note 4 12 VSS VSS 1 2 Typ VS+15 --15 --------Max VS+20 400 20 VSS+5 VSS+5 ----V V s s Units V
Note 3: For more details, see IR21363 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)
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IRAM136-3063B
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are applicable to all six channels. (Note 3) Symbol VIH VIL VCCUV+, VBSUV+ VCCUV-, VBSUVVCCUVH, VBSUVH VIN,Clamp IQBS IQCC ILK IIN+ IINITRIP+ ITRIPV(ITRIP) V(ITRIP,HYS) Definition Logic "0" input voltage Logic "1" input voltage VCC and VBS supply undervoltage positive going threshold VCC and VBS supply undervoltage negative going threshold VCC and VBS supply undervoltage lock-out hysteresis Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10A Quiescent VBS supply current VIN=0V Quiescent VCC supply current VIN=0V Offset Supply Leakage Current Input bias current VIN=5V Input bias current VIN=0V ITRIP bias current VITRIP=5V ITRIP bias current VITRIP=0V ITRIP threshold Voltage ITRIP Input Hysteresis Min 3.0 --10.6 10.4 --4.9 --------------440 --Typ ----11.1 10.9 0.2 5.2 ------200 100 30 0 490 70 Max --0.8 11.6 11.4 --5.5 165 3.35 60 300 220 100 1 540 --Units V V V V V V A mA A A A A A mV mV
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.) Symbol TON TOFF TFLIN TBLT-Trip DT MT TITrip TFLT-CLR Parameter Input to Output propagation turnon delay time (see fig.11) Input to Output propagation turnoff delay time (see fig. 11) Input Filter time (HIN, LIN) ITRIP Blancking Time Dead Time (VBS=VDD=15V) Matching Propagation Delay Time (On & Off) ITrip to six switch to turn-off propagation delay (see fig. 2) Post ITrip to six switch to turn-off clear time (see fig. 2) Min ----100 100 220 --------Typ 600 700 200 150 290 40 --34 29 360 75 3.75 ----Max ------Units Conditions ns VCC=VBS= 15V, IC=15A, V+=400V ns ns ns ns ns s ms VIN=0 & VIN=5V VIN=0 & VIN=5V VBS=VCC=15V VCC= VBS= 15V, external dead time> 400ns VCC=VBS= 15V, IC=15A, V+=400V TC = 25C TC = 100C
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IRAM136-3063B
Thermal and Mechanical Characteristics
Symbol Rth(J-C) Rth(J-C) Rth(C-S) CD Parameter Thermal resistance, per IGBT Thermal resistance, per Diode Thermal resistance, C-S Creepage Distance Min ------3.5 Typ 1.5 2.5 0.1 --Max 1.7 ------Units Conditions Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK mm See outline Drawings
Internal Current Sensing Resistor - Shunt Characteristics
Symbol RShunt TCoeff PShunt TRange Parameter Resistance Temperature Coefficient Power Dissipation Temperature Range Min 9.4 0 ---20 Typ 9.6 ------Max 9.8 200 4.5 125 Units Conditions m ppm/C W C -40C < TC < 100C TC = 25C
Internal NTC - Thermistor Characteristics
Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 97 2.25 4165 -40 --Typ 100 2.52 4250 --1 Max 103 2.8 4335 125 --Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range Typ. Dissipation constant
Input-Output Logic Level Table
V+
FLT/EN
HIN1,2,3 (20,22,23) IC Driver LIN1,2,3 Lo (24,25,26) Ho U,V,W (10,6,2)
ITRIP 0 0 0 1 X
HIN1,2,3 1 0 0 X X
LIN1,2,3 0 1 0 X X
U,V,W V+ 0 Off Off Off
1 1 1 1 0
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IRAM136-3063B
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
TITRIP
Figure 2. ITRIP Timing Waveform
TFLT-CLR
Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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IRAM136-3063B
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Name VB1 U, VS1 NA VB2 V,VS2 NA VB3 W,VS3 NA V
+
Description High Side Floating Supply Voltage 1 Output 1 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 3 Output 3 - High Side Floating Supply Offset Voltage none Positive Bus Input Voltage none Negative Bus Input Voltage Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Temperature Monitor and Fault Function Current Monitor +15V Main Supply Negative Main Supply
NA VHIN1 HIN2 HIN3 LIN1 LIN2 LIN3 Fault/TMON ISense VCC VSS
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IRAM136-3063B
Typical Application Connection IRAM136-3063B
1
BOOT-STRAP CAPACITORS
U
VB1
VB2
IRAM136-3063B
3-Phase AC MOTOR V+
V VB3
W V+
DC BUS CAPACITORS
VHIN1 HIN2 HIN3 LIN1 LIN2 LIN3 FLT/TMON ITRIP
Date Code Lot #
+5V
CONTROLLER 12kohm Fault & Temp Monitor IMonitor
Vcc (15 V)
+5V
VSS
22
+15V
0.1m 10m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 6. Fault/TMON Monitor pin must be pulled-up to +5V.
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IRAM136-3063B
22 Maximum Output Phase RMS Current - A 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz TC = 80C TC = 90C TC = 100C
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150C, Modulation Depth=0.8, PF=0.6
18 Maximum Output Phase RMS Current - A 16 14 12 10 8 6 4 2 0 1 10 Modulation Frequency - Hz 100 FPWM = 6kHz FPWM = 9kHz FPWM = 12kHz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=400V, TJ=100C, Modulation Depth=0.8, PF=0.6
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IRAM136-3063B
350 300 Total Power Loss- W 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 PWM Sw itching Frequency - kHz IOUT = 18A IOUT = 15A IOUT = 12A 18 20
Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150C, Modulation Depth=0.8, PF=0.6
350 300 Total Power Loss - W 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Phase Current - ARMS FPWM = 12kHz FPWM = 9kHz FPWM = 6kHz
Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=400V, TJ=150C, Modulation Depth=0.8, PF=0.6
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IRAM136-3063B
160 Max Allowable Case Temperature - C 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Phase Current - ARMS FPWM = 6kHz FPWM = 9kHz FPWM = 12kHz
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=400V, TJ=150C, Modulation Depth=0.8, PF=0.6
160
IGBT Junction Temperature - C
150 140
130
120 110 98.3 65 70 75 80 85 90 95 100 105
100
Internal Therm istor Tem perature Equivalent Read Out - C
Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=15Arms, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6
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IRAM136-3063B
5.0 4.5 Thermistor Pin Read-Out Voltage - V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
TTHERM C -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 RTHERM 4397119 3088599 2197225 1581881 1151037 846579 628988 471632 357012 272500 209710 162651 127080 TTHERM RTHERM TTHERM C C 25 100000 90 30 79222 95 35 63167 100 40 50677 105 45 50 55 60 65 70 75 80 85 40904 33195 27091 22224 18322 15184 12635 10566 8873 110 115 120 125 130 135 140 145 150 RTHERM 7481 6337 5384 4594 3934 3380 2916 2522 2190 1907 1665 1459 1282
+5V REXT VTherm RTherm
Min Avg. Max
0.0 -40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - C
Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table.
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0
Recommended Bootstrap Capacitor - F
15 F
10 F
6.8 F 4.7 F
5
10 PWM Frequency - kHz
15
20
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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IRAM136-3063B
Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output propagation turn-on delay time.
Figure 11b. Input to Output propagation turn-off delay time.
Figure 11c. Diode Reverse Recovery.
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IRAM136-3063B
V+
Hin1,2,3
IC Driver
Ho
U,V,W
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Hin1,2,3
IC Driver
Ho
IN
U,V,W
Lin1,2,3
IO
Lo
Io
Figure CT2. S.C.SOA Circuit
V+
Hin1,2,3
IC Driver
Ho
IN
U,V,W
Lin1,2,3
IO
Lo
Io
Figure CT3. R.B.SOA Circuit
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IRAM136-3063B
Package Outline
Missing Pin : 3,6,9,11 note3
note4
IRAM136-3063B
note2
P 4KB00
note5
note1: Unit Tolerance is +0.5mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: "P" Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module.
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 11/2007
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