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| 20TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES * * * * * * * * * * 175 C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Base cathode 2 RoHS COMPLIANT TO-220AC 1 Cathode 3 Anode Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Full lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level APPLICATIONS PRODUCT SUMMARY IF(AV) VR 20 A 100 V * * * * * * * * High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling Dc-to-dc systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM VF TJ 20 Apk, TJ = 125 C (typical) Range CHARACTERISTICS Rectangular waveform VALUES 20 100 0.63 - 55 to 175 UNITS A V C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 C 20TT100 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 C, IAS = 1.5 A, L = 60 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ maximum as a function of time pulse See fig. 8 TEST CONDITIONS 50 % duty cycle at TC = 160 C, rectangular waveform 5 s sine or 3 s rect. pulse Following any rated load condition and with rated VRRM applied VALUES 20 900 300 67.5 IAS at TJ maximum mJ A A UNITS Document Number: 94531 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 20TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 20 A Forward voltage drop VFM (1) TEST CONDITIONS TJ = 25 C TJ = 125 C TYP. 850 8.0 - MAX. 0.8 0.95 0.67 0.8 150 6 10 000 UNITS 40 A 20 A 40 A V Reverse leakage current Junction capacitance Series inductance Maximum voltage rate of change Note (1) Pulse width < 300 s, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 C TJ = 125 C VR = Rated VR A mA pF nH V/s VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 2 C/W 0.5 2 0.07 6 (5) 12 (10) g oz. kgf * cm (lbf * in) TO-220AC 20TT100 UNITS C Mounting torque Case style Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94531 Revision: 22-Oct-07 20TT100 High Performance Vishay High Power Products Schottky Generation 5.0, 20 A 100 Reverse Current - IR (mA) 100 175C 10 150C 125C 100C 0.1 75C 50C Tj = 175C 1 Instantaneous Forward Current - IF (A) 0.01 0.001 0 20 40 60 80 100 Reverse Voltage - VR (V) 10 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Tj = 25C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Junction Capacitance - CT (pF) 100 0 20 40 60 80 100 Tj = 125C Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (C/W) 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single Pulse (Thermal Resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94531 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 20TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20 180 Allowable Case Temperature (C) Average Power Loss - (Watts) 160 DC 15 180 120 90 60 30 140 10 RMS Limit DC 120 Square wave (D=0.50) 80% rated Vr applied see note (1) 5 100 0 5 10 15 20 25 30 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 0 5 10 15 20 25 30 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM(A) 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94531 Revision: 22-Oct-07 20TT100 High Performance Vishay High Power Products Schottky Generation 5.0, 20 A 100 Avalanche Current (A) Tj = 25C 10 Tj = 125C 1 Tj = 175C 0.1 1 10 100 Rectangular Pulse Duration ( sec) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 100 Avalanche Energy (mJ) 10 Tj = 25C Tj = 125C Tj = 175C 1 1 10 100 Rectangular Pulse Duration ( sec) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: 94531 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 20TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A ORDERING INFORMATION TABLE Device code 20 1 1 2 3 4 - T 2 T 3 100 4 Current rating (20 A) Package: T = TO-220 T = Trench Voltage code (100 V) Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model http://www.vishay.com/doc?95221 http://www.vishay.com/doc?95224 http://www.vishay.com/doc?95228 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94531 Revision: 22-Oct-07 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier's Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier(R), IR(R), the IR logo, HEXFET(R), HEXSense(R), HEXDIP(R), DOL(R), INTERO(R), and POWIRTRAIN(R) are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1 |
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