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| AP4503GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Performance D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 S2 G1 S1 G1 S1 30V 28m 6.9A -30V 36m -6.3A P-CH BVDSS RDS(ON) ID SO-8 SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 20 6.9 5.5 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 20 -6.3 -5 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 201225061-1/7 AP4503GM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. Max. Units 0.005 28 42 3 1 25 100 15 970 - V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A 5.7 9 2 6 8 7 19 6 610 160 120 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=6A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD IS trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=6A, VGS=0V VD=VG=0V , VS=1.2V IS=6A, VGS=0V dI/dt=100A/s Min. - Typ. Max. Units 18 11 1.2 1.7 V A ns nC Continuous Source Current ( Body Diode ) Reverse Recovery Time Reverse Recovery Charge 2/7 AP4503GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current ( Tj=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.004 Max. Units 36 55 -3 -1 -25 100 24 1540 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-6A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz 5.8 9 2 5 12 8 42 34 960 300 220 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD IS trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-6A, VGS=0V VD=VG=0V , VS=-1.2V IS=-6A, VGS=0V dI/dt=-100A/s Min. - Typ. 24 18 Max. Units -1.2 -1.7 V A ns nC Continuous Source Current ( Body Diode ) Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. 3/7 AP4503GM N-Channel 100 70 T A =25 C 80 o 10V ID , Drain Current (A) 60 T A =150 o C 10V 7.0V ID , Drain Current (A) 50 60 7.0V 40 30 40 5.0V 4.5V 20 5.0V 4.5V 20 V G =3.0V 0 10 V G =3.0V 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 42 1.8 I D =6A 38 T A =25 C Normalized RDS(ON) 34 1.4 o 1.6 I D =6A V G =10V RDS(ON) (m ) 30 1.2 26 1.0 -6.3 -5 22 0.8 18 3 5 7 9 11 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j ,Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 7 6 1.5 5 IS(A) 4 VGS(th) (V) 1.2 1 3 T j =150 o C 2 T j =25 o C 0.5 1 0 0 0.2 0.4 0.6 0.8 1 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4503GM N-Channel f=1.0MHz 12 10000 VGS , Gate to Source Voltage (V) 10 I D =6A V DS =24V 1000 8 Fast Switching Performance 6 4 C (pF) Ciss 100 Coss Crss 2 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Dity factor=0.5 10 0.2 100us 0.1 0.1 0.05 ID (A) 1 1ms 10ms 0.02 0.01 PDM 0.01 Single Pulse 0.1 T A =25 C Single Pulse 0.01 o 100ms 1s 10s DC 1 10 100 -6.3 -5 0.1 1 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135o C/W 0.001 0.1 0.0001 0.001 0.01 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 5/7 AP4503GM P-Channel 100 70 T A =25 o C 80 -10V -ID , Drain Current (A) -7.0V 60 T A =150 o C -10V -7.0V -ID , Drain Current (A) 50 60 40 40 -5.0V -4.5V 30 -5.0V -4.5V 20 20 V G =-3.0V 0 10 V G =-3.0V 0 0 1 2 3 4 5 6 7 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.6 I D = -6 A T A =25 o C 50 1.4 I D =-6A V G =10V Normalized RDS(ON) RDS(ON) (m) 1.2 40 1.0 30 0.8 -6.3 -5 20 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 7 6 5 2 4 3 T j =150 o C T j =25 o C -VGS(th) (V) 1.5 1 -IS(A) 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4503GM P-Channel f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 I D =-6A V DS =-24V 8 1000 Ciss Coss Crss 6 4 C (pF) 100 10 0.0 5.0 10.0 15.0 20.0 1 5 9 13 17 21 25 2 0 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 1ms -ID (A) 0.1 0.1 0.05 1 10ms 100ms 0.02 0.01 0.01 Single Pulse 0.1 T A =25 o C Single Pulse 1s 10s DC 1 10 100 -6.3 -5 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135oC/W 0.01 0.1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 7/7 |
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