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| PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k Rev. 07 -- 24 September 2008 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Package NXP PEMD2 PIMD2 PUMD2 SOT666 SOT457 SOT363 JEITA SC-74 SC-88 PNP/PNP complement PEMB1 PUMB1 NPN/NPN complement PEMH1 PUMH1 Type number 1.2 Features I I I I Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs 1.3 Applications I Low current peripheral driver I Control of IC inputs I Replaces general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Min 15.4 0.8 Typ 22 1 Max 50 100 28.6 1.2 Unit V mA k NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 1 2 3 001aab555 TR1 R2 R1 R1 R2 TR2 Simplified outline Graphic symbol PEMD2; PUMD2 6 5 4 6 5 4 1 2 3 006aaa143 PIMD2 1 2 3 4 5 6 GND (emitter) TR2 input (base) TR2 output (collector) TR1 GND (emitter) TR1 input (base) TR1 output (collector) TR2 1 1 2 3 TR2 R2 R1 6 5 4 6 5 4 R1 R2 TR1 2 3 006aab235 3. Ordering information Table 4. Ordering information Package Name PEMD2 PIMD2 PUMD2 SC-74 SC-88 Description plastic surface-mounted package; 6 leads plastic surface-mounted package (TSOP6); 6 leads plastic surface-mounted package; 6 leads Version SOT666 SOT457 SOT363 Type number PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 2 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 4. Marking Table 5. PEMD2 PIMD2 PUMD2 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] D4 M5 D*2 Type number 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage TR1 positive negative input voltage TR2 positive negative IO ICM Ptot output current peak collector current total power dissipation PEMD2 (SOT666) PIMD2 (SOT457) PUMD2 (SOT363) Tj Tamb Tstg junction temperature ambient temperature storage temperature single pulse; tp 1 ms Tamb 25 C [1] [2] Conditions open emitter open base open collector Min - Max 50 50 10 +40 -10 +10 -40 100 100 Unit V V V V V V V mA mA Per transistor; for the PNP transistor with negative polarity -65 -65 200 300 200 150 +150 +150 mW mW mW C C C PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 3 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k Table 6. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Ptot total power dissipation PEMD2 (SOT666) PIMD2 (SOT457) PUMD2 (SOT363) [1] [2] Parameter Conditions Tamb 25 C [1] [2] Min Max Unit - 300 600 300 mW mW mW Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient PEMD2 (SOT666) PIMD2 (SOT457) PUMD2 (SOT363) Per device Rth(j-a) thermal resistance from junction to ambient PEMD2 (SOT666) PIMD2 (SOT457) PUMD2 (SOT363) [1] [2] Conditions in free air [1] Min Typ Max Unit Per transistor [2] - - 625 417 625 K/W K/W K/W in free air [1] [2] - - 416 208 416 K/W K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 4 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO ICEO Parameter Conditions Min 60 2.5 15.4 0.8 Typ 1.1 1.7 22 1 Max 100 1 50 180 150 0.8 28.6 1.2 mV V V k Unit nA A A A Per transistor; for the PNP transistor with negative polarity collector-base cut-off VCB = 50 V; IE = 0 A current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz TR1 (NPN) TR2 (PNP) 2.5 3 pF pF VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA IC = 10 mA; IB = 0.5 mA VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 5 mA IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 5 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 103 hFE (1) (2) (3) 006aaa038 10-1 006aaa039 (1) VCEsat (V) (2) (3) 102 10 1 10-1 1 10 IC (mA) 102 10-2 1 10 IC (mA) 102 VCE = 5 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -40 C IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 2. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 10 006aaa041 10 006aaa040 VI(on) (V) (1) (2) VI(off) (V) 1 (3) 1 (1) (2) (3) 10-1 10-1 1 10 IC (mA) 102 10-1 10-2 10-1 1 IC (mA) 101 VCE = 0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C VCE = 5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 3. TR1 (NPN): On-state input voltage as a function of collector current; typical values Fig 4. TR1 (NPN): Off-state input voltage as a function of collector current; typical values PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 6 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 103 RCEsat () 102 (1) (2) (3) 006aab351 10 1 10-1 1 10 IC (mA) 102 IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C Fig 5. TR1 (NPN): Collector-emitter saturation resistance as a function of collector current; typical values PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 7 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 103 hFE (1) (2) (3) 006aab197 -1 006aab198 VCEsat (V) 102 -10-1 (1) (2) (3) 10 1 -10-1 -1 -10 IC (mA) -102 -10-2 -1 -10 IC (mA) -102 VCE = -5 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -40 C IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C Fig 6. TR2 (PNP): DC current gain as a function of collector current; typical values Fig 7. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values -10 006aab200 -10 006aab199 VI(on) (V) (1) (2) VI(off ) (V) (1) -1 (3) -1 (2) (3) -10-1 -10-1 -1 -10 IC (mA) -102 -10-1 -10-2 -10-1 -1 IC (mA) -10 VCE = -0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C VCE = -5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 8. TR2 (PNP): On-state input voltage as a function of collector current; typical values Fig 9. TR2 (PNP): Off-state input voltage as a function of collector current; typical values PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 8 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 103 RCEsat () 102 (1) (2) (3) 006aab352 10 1 -10-1 -1 -10 IC (mA) -102 IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C Fig 10. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 9 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 8. Package outline 3.1 2.7 6 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 3.0 2.5 1.7 1.3 pin 1 index 5 4 0.6 0.2 1.1 0.9 1.7 1.5 6 5 4 0.6 0.5 1 0.5 1 Dimensions in mm 2 3 0.27 0.17 0.18 0.08 04-11-08 1 0.95 1.9 Dimensions in mm 2 3 0.40 0.25 0.26 0.10 04-11-08 Fig 11. Package outline PEMD2 (SOT666) 2.2 1.8 6 5 Fig 12. Package outline PIMD2 (SOT457/SC-74) 1.1 0.8 4 0.45 0.15 2.2 1.35 2.0 1.15 pin 1 index 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 06-03-16 Fig 13. Package outline PUMD2 (SOT363/SC-88) PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 10 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PEMD2 PIMD2 PUMD2 Package Description SOT666 SOT457 SOT363 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] [2] [3] [2] [3] Packing quantity 3000 4000 8000 10000 -115 -125 -115 -125 -115 -315 -135 -165 -135 -165 For further information and the availability of packing methods, see Section 13. T1: normal taping T2: reverse taping 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6x) 0.25 (2x) 0.55 (2x) 0.3 (2x) placement area solder paste occupied area 0.325 0.375 (4x) (4x) 1.7 0.45 (4x) 0.5 (4x) 0.6 (2x) 0.65 (2x) sot666_fr 0.538 2 1.7 1.075 Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint PEMD2 (SOT666) PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 11 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 3.45 1.95 0.95 3.3 2.825 0.95 0.45 0.55 (6x) (6x) solder lands solder resist solder paste occupied area 0.7 (6x) 0.8 (6x) 2.4 Dimensions in mm sot457_fr Fig 15. Reflow soldering footprint PIMD2 (SOT457/SC-74) 5.3 1.5 (4x) solder lands 1.475 5.05 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6x) 2.85 sot457_fw 0.45 (2x) solder resist occupied area Fig 16. Wave soldering footprint PIMD2 (SOT457/SC-74) PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 12 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2.65 solder lands 2.35 1.5 0.6 0.5 (4x) (4x) 0.4 (2x) solder resist solder paste 0.5 (4x) 0.6 (4x) 1.8 0.6 (2x) occupied area Dimensions in mm sot363_fr Fig 17. Reflow soldering footprint PUMD2 (SOT363/SC-88) 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport direction during soldering 1.3 2.45 5.3 1.3 sot363_fw Fig 18. Wave soldering footprint PUMD2 (SOT363/SC-88) PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 13 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 11. Revision history Table 10. Revision history Release date 20080924 Data sheet status Product data sheet Change notice Supersedes PEMD2_PIMD2_PUMD2_6 Document ID PEMD2_PIMD2_PUMD2_7 Modifications: * * * * * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Table 8 "Characteristics": VCEsat unit corrected Figure 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10: added Section 12 "Legal information": updated Product specification PEMD2_PIMD2_PUMD2_5 PEMD2_PIMD2_PUMD2_6 20040421 PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 14 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PEMD2_PIMD2_PUMD2_7 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 -- 24 September 2008 15 of 16 NXP Semiconductors PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 September 2008 Document identifier: PEMD2_PIMD2_PUMD2_7 |
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