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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 DESCRIPTION *Contunuous Collector Current-IC= -1A *Power Dissipation-PC= 35W @TC= 25 *Collector-Emitter Saturation Voltage: VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS *Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -250 UNIT V V Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature w ww scs .i -175 -6 -1.0 -5.0 -1.0 35 200 -65~200 .cn mi e V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N6420 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= -50mA ; IB= 0 IC= -1A; IB= -0.125A IC= -1A ; VCE= -10V VCE= -150V; IB= 0 VCE= -225V; VBE(off)= -1.5V VCE= -225V; VBE(off)= -1.5V,TC=150 VEB= -6V; IC= 0 -175 -5.0 -1.4 -10 -1.0 -3.0 -5.0 V V V mA mA VCE(sat) VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain w ww scs .i IC= -0.1A ; VCE= -10V IC= -0.5A ; VCE= -10V IC= -1A ; VCE= -10V .cn mi e mA 40 40 200 10 isc Websitewww.iscsemi.cn 2 |
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