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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1063 DESCRIPTION *With TO-3 package *Low collector saturation voltage *High transition frequency APPLICATIONS *Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -6 -10 80 150 -65~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1063 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A B -2.0 V VBE Base-emitter on voltage IC=-4A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 A IEBO Emitter cut-off current VEB=-3V; IC=0 -50 A hFE-1 DC current gain IC=-1A ; VCE=-5V 40 280 hFE-2 DC current gain IC=-4A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 50 MHz hFE-1 Classifications R 40-80 Q 60-120 P 90-180 O 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1063 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
Price & Availability of 2SA1063 |
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