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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4984 Features Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation,mounted on ceramic board(250mm2X0.8mm) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 15 15 5 1.5 3 300 1.3 150 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type 2SC4984 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) Testconditons VCB = 12 V, IE=0 VEB = 4 V, IC=0 VCE = 2V , IC = 50mA VCE = 2V , IC = 50mA VCB = 10V , f = 1.0MHz IC = 5 mA , IB = 0.5 mA IC = 500 mA , IB = 25 mA VBE(sat) IC = 500 mA , IB = 25 mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 Transistors Min Typ Max 100 100 Unit nA nA 140 200 10 10 120 0.9 15 15 5 560 MHz pF 25 240 1.2 mV V V V mV hFE Classification Marking Rank hFE S 140 280 CT T 200 400 U 280 560 2 www.kexin.com.cn |
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