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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD110 DESCRIPTION *High Power Dissipation: PC= 100W@TC= 25 *High Current Capability: IC = 10A APPLICATIONS *Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IE IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature VALUE 130 110 10 10 -10 3 100 150 -65~150 UNIT V V V A A A W PC TJ Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 50mA ; RBE= MIN TYP. 2SD110 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.5 V Collector Cutoff Current VCB= 50V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 30 300 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 10 fT Current-Gain--Bandwidth Product IC= 1A ; VCE= 10V 1 MHz COB Output Capacitance IE= 0 ; VCB= 50V; f= 1MHz 200 pF hFE-2 Classifications R 30-90 O 50-150 Y 100-300 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD110
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