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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD560 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= 3.0A *Low Saturation Voltage *Complement to Type 2SB601 APPLICATIONS *Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 0.5 A 1.5 W PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 3A; L= 1mH, IB= 3mA IC= 3A; IB= 3mA B 2SD560 MIN 100 TYP. MAX UNIT V 1.5 2.0 1 3 2000 500 15000 V V A mA IC= 3A; IB= 3mA B VCB= 100V; IE=0 VEB= 5V; IC=0 IC= 3A ; VCE= 2V IC= 5A ; VCE= 2V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A , IB1= -IB2= 3mA RL= 16.7; VCC50V 0.5 1.0 1.0 s s s hFE-1 Classifications R 2000-5000 O 3000-7000 Y 5000-15000 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD560 isc Websitewww.iscsemi.cn |
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