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AO4430 N-Channel Enhancement Mode Field Effect Transistor
General Description The AO4430/L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430 and AO4430L are electrically identical. -RoHS Compliant -AO4430L is Halogen Free
Features
VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5m (VGS = 10V) RDS(ON) < 7.5m (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested!
SOIC-8 D
D
G S
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current
B B B
Maximum 30 20 18 15 80 3 2.1 30 135 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG
W A mJ C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=18A IS=1A,VGS=0V TJ=125C 1 80 4.7 6.5 6.2 82 0.7 1 4.5 4660 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 425 240 0.2 80 VGS=10V, VDS=15V, ID=18A 37 6060 638 355 0.45 103 48 18 15 12 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/s 8 51.5 8.8 33.5 22 16 12 70 14 44 30 7270 960 530 0.9 124 58 5.5 8 7.5 1.8 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev5: Nov 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 10V 50 3.5V 40 ID (A) 30 20 10 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 7.0 VGS=4.5V 6.0 RDS(ON) (m ) 5.5 5.0 4.5 4.0 3.5 0 20 40 60 80 100 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V Normalized On-Resistance 6.5 1.6 ID=18A 1.4 VGS=10V 1.2 VGS=4.5V ID(A) 40 125C 30 20 25C 10 0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 4.5V 50 VDS=5V 60
3.0V
1
16
1.0E+02 1.0E+01
12 ID=18A RDS(ON) (m ) 8 125C IS (A)
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 125C
25C
4
25C
0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 120 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=18A Capacitance (pF) 6000 8000
Ciss
4000
2000
Crss
Coss
0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30
100.0 RDS(ON) limited 10ms ID (Amps) 10.0 0.1s 1s 10s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100s 1ms Power (W) 10s
100 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
Gate Charge Test Circuit & Waveform
Vgs Qg 10V
+
VD C
DUT Vgs Ig
+
VDC
Vds
Qgs
Q gd
-
Charge
Resistive Switching Test Circuit & Waveforms
R L Vds Vds
Vgs Rg
DU T
VD C
+ Vdd Vgs
t d(on) tr t on t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR
BVDSS
+
VDC
Vdd Id
I AR
-
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs Vds Qrr = - Idt
Isd Vgs
L
Isd
IF
dI/dt IRM
trr
+
VD C
Vdd Vds
Ig
-
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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