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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX34/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX33/A/B/C Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER CONDITIONS BDX33 BDX33A BDX33B Collector-base voltage VCEO IN Collector-emitter voltage HAN C SEM GE BDX33C BDX33 BDX33A BDX33B BDX33C Open base Open emitter ICON DUC VALUE 45 60 80 TOR UNIT V 100 45 60 80 100 V VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature Open collector 5 10 15 0.25 V A A A W ae ae TC=25ae 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.78 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDX33 BDX33A IC=0.1A, IB=0 BDX33B BDX33C BDX33/33A BDX33B/33C BDX33/33A BDX33B/33C BDX33 IC=4A ,IB=8mA 80 100 CONDITIONS MIN 45 60 BDX33/A/B/C SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V VCEsat Collector-emitter saturation voltage 2.5 IC=3A ,IB=6mA IC=4A ; VCE=3V 2.5 IC=3A ; VCE=3V VCB=45V, IE=0 VCB=60V, IE=0 VCB=80V, IE=0 V VBE Base-emitter on voltage V ICBO IN Collector cut-off current BDX33A BDX33B BDX33C BDX33 ICEO Collector cut-off current ANG CH BDX33A BDX33B BDX33C EMIC ES VCB=100V, IE=0 VCE=22V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 DUC ON TOR 0.2 0.5 mA mA IEBO Emitter cut-off current BDX33/33A DC current gain BDX33B/33C 5 mA hFE IC=4A ; VCE=3V 750 IC=3A ; VCE=3V IF=8A 4.0 V VF Forward diode voltage 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX33/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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