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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH713 DESCRIPTION With TO-3PML package High voltage,high speed APPLICATIONS Horizontal deflection for colour TV's and monitors. Switching mode power supplies PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-base voltage PARAMETER CONDITIONS Collector-emitter voltage INCH Emitter-base voltage Collector current (DC) ANG SEM E Open base Open collector Open emitter OND IC TOR UC VALUE 1300 700 10 10 20 5 10 UNIT V V V A A A A W ae ae Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25ae 57 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.2 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUH713 SYMBOL MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC=100mA 700 V VEBO Emitter-base breakdown voltage IE=10mA 10 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.5A 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.5A VCE=1300V; VBE=0 Tj=125ae VEB=5V; IC=0 1.3 1 2 100 |I V ICES Collector cut-off current mA IEBO Emitter cut-off current A hFE DC current gain Switching times ts IC=7A ; VCE=5V 8 Storage time tf Fall time HAN INC SEM GE IC=7A;IB1=1.5A;IB2=3.5A; VCC=400V OND IC TOR UC 2.1 3.1 |I 140 210 s ns 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH713 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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