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Low Voltage ClampTM for ESD and CDE Protection
PROTECTION PRODUCTS - MicroClampTM Description
The Clamp series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The ClampTM3301P is constructed using Semtech's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The ClampTM3301P is in an 2-pin, RoHS/WEEE compliant, SLP1006P2 package. It measures 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 610004-2, Level 4 (15kV air, 8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players.
TM
UCLAMP3301P
Features
Transient protection for data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Ultra-small package (1.0 x 0.6 x 0.5mm) Protects one data line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology
Mechanical Characteristics
SLP1006P2 package RoHS/WEEE Compliant Nominal Dimensions: 1.0 x 0.6 x 0.5 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking: Marking code, cathode band Packaging: Tape and Reel
Applications
Cellular Handsets & Accessories Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players
Dimensions
1.0 0.60 0.65
Schematic & PIN Configuration
2
0.50
1
SLP1006P2 (Bottom View)
1 www.semtech.com
Maximum Dimensions (mm)
Revision 2/15/2008
UCLAMP3301P
PROTECTION PRODUCTS Absolute Maximum Rating
R ating Peak Pulse Power (tp = 8/20s) Maximum Peak Pulse Current (tp = 8/20s) ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Symbol Pp k Ip p VESD TJ TSTG Value 40 5 +/- 20 +/- 15 -40 to +85 -55 to +150 Units Watts Amps kV C C
Electrical Characteristics (T=25oC)
Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Reverse Clamp ing Voltage Junction Cap acitance Symbol VRWM V PT VSB IR VC VC VCR Cj IPT = 2A ISB = 50mA VRWM = 3.3V IPP = 1A, tp = 8/20s IPP = 5A, tp = 8/20s IPP = 1A, tp = 8/20s I/O p in to Gnd VR = 0V, f = 1MHz I/O p in to Gnd VR = 3.3V, f = 1MHz 25 3.5 2.8 0.05 0.5 5.5 8.0 2.4 30 3.9 Conditions Minimum Typical Maximum 3.3 4.6 Units V V V A V V V pF
14
pF
(c) 2008 Semtech Corp.
2
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UCLAMP3301P
PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
1
110 100 90 % of Rated Power or I PP 80 70 60 50 40 30 20 10 0
Power Derating Curve
Peak Pulse Power - P PP (kW)
0.1
0.01 0.1 1 10 Pulse Duration - tp (s) 100 1000
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Clamping Voltage vs. Peak Pulse Current
12 10 8 6 4 2 0 0 1 2 3 4 5 Waveform Parameters: tr = 8s td = 20s
Normalized Junction Capacitance vs. Reverse Voltage
1.2 f = 1 MHz 1 Cj(VR) / Cj(VR=0V) 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V) 3 3.5
Clamping Voltage - VC (V)
Peak Pulse Current - IPP (A)
Insertion Loss S21
CH1 S21 LOG 6 dB / REF 0 dB 1: -9.2069 dB 900 MHz 2: -12.958 dB 1.8 GHz 3: -11.689 dB 2.5 GHz 0 dB -6 dB -12 dB -18 dB -24 dB -30 dB -36 dB 1 MHz START . 030 MHz 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz
1 3 2 4
ESD Clamping (8kV Contact per IEC 61000-4-2)
4: -3.0358 dB 227MHz
Note: Data is taken with a 10x attenuator 3 www.semtech.com
(c) 2008 Semtech Corp.
UCLAMP3301P
PROTECTION PRODUCTS Applications Information
Device Connection Options The Clamp3301P is designed to protect one data or I/O line operating at 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will "turn on" when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. These devices should not be connected to DC supply rails as they can latch up as described below. Due to the "snap-back" characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics The Clamp3301P is constructed using Semtech's proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the Clamp3301P can effectively operate at 3.3V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteris(c) 2008 Semtech Corp. 4
IPP
Device Schematic & Pin Configuration Pin 2
Pin 1
EPD TVS IV Characteristic Curve
ISB
IPT VF IR VRWM V V VC PT SB
IF
tics due to its structures. This point is defined on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state.
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UCLAMP3301P
PROTECTION PRODUCTS Applications Information - Spice Model
Figure 1 - UCLAMP3301P Spice Model
Table 1 - Clamp3301P Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (T VS) 1.00E-20 3.3 14 0.482 1.0E-3 14E-12 2.541E-9 0.155 1.1 1.11 D2 (LCR D) 1.00E-20 8 0.69 0.898 1.0E-3 7E-12 2.541E-9 0.155 1.1 1.11
(c) 2008 Semtech Corp.
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UCLAMP3301P
PROTECTION PRODUCTS Outline Drawing - SLP1006P2
A D B
E
DIM
A A1 b D E e L R N aaa bbb
TOP VIEW
A aaa C A1 PIN 1 ID R bxN bbb CAB 2x L e C
SEATING PLANE
.016 .020 .022 .000 .001 .002 .018 .020 .022 .035 .039 .043 .020 .024 .028 .026 BSC .008 .010 .012 .002 .004 .006 2 .003 .004
DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX
0.40 0.50 0.55 0.00 0.03 0.05 0.45 0.50 0.55 0.90 1.00 1.10 0.50 0.60 0.70 0.65 BSC 0.20 0.25 0.30 0.05 0.10 0.15 2 0.08 0.10
BOTTOM VIEW NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
Land Pattern - SLP1006P2
Y (C) G Z
DIMENSIONS DIM C G X Y Z INCHES (.033) .012 .024 .022 .055 MILLIMETERS (0.85) 0.30 0.60 0.55 1.40
X
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.
(c) 2008 Semtech Corp.
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UCLAMP3301P
PROTECTION PRODUCTS Marking Code Ordering Information
Part Number Working Voltage 3.3V Qty per Reel 3,000 Reel Size 7 Inch
3P
PIN 1 ID
Note: Cathode bar at Pin 2
uClamp 3301P.TCT
Notes: 1) This is a lead-free, RoHS/WEEE compliant product MicroClamp, uClamp and Clamp are marks of Semtech Corporation
Tape and Reel Specification
Pin 1 Location
User Direction of feed
Device Orientation in Tape
A0 0.69 +/-0.10 mm B0 1.19 +/-0.10 mm K0 0.66 +/-0.10 mm
Tape Width
B, (Max)
D 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000)
D1
E 1.750.10 mm (.069.004)
F
P 4.00.10 mm (.157.004)
P0 4.00.1 mm (.157.004)
P2
T
W 8.0 mm + 0.3 mm - 0.1 mm (.312.012)
8 mm
4.2 mm (.165)
0.4 mm 0.25 (.031)
3.50.05 mm (.138.002)
2.00.05 mm (.079.002)
0.2540.02 mm (.016)
Contact Information
Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
(c) 2008 Semtech Corp.
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