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VESD05A1-02V
Vishay Semiconductors
ESD-Protection Diode in SOD523
Features
* Single-line ESD-protection device * ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge * Typ. capacitance 130 pF * Leakage current < 1 A (VR = 5 V) * AEC Q101 qualified * Lead (Pb)-free component * Lead finish = "e3" = matte tin (Sn) * Non-magnetic package material * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
1
2
20278 19344
Marking (example only)
XY
Ordering Information
Device name VESD05A1-02V
20279
Bar = Cathode marking X = Date code Y = Type code (see table below)
Ordering code VESD05A1-02V-GS08
Taped units per reel (8 mm tape on 7" reel) 3000
Minimum order quantity 3000
Package Data
Device name VESD05A1-02V Package name SOD523 Type code F Weight 1.5 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level Soldering conditions
MSL level 1 (according J-STD-020) 260 C/10 s at terminals
Absolute Maximum Ratings
Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Test condition Acc. IEC 61000-4-5, tP = 8/20 s/single shot Acc. IEC 61000-4-5, tP = 8/20 s/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Symbol IPPM PPP VESD VESD TJ TSTG Value 16 192 30 30 - 40 to + 125 - 55 to + 150 Unit A W kV kV C C
Document Number 84702 Rev. 1.3, 27-Oct-08
For technical support, please contact: ESD-Protection@vishay.com
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VESD05A1-02V
Vishay Semiconductors BiAs-Mode (Bidirectional Asymmetrical protection mode)
With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behaviour is Bidirectional and Asymmetrical (BiAs).
L1
2 1
20280
Electrical Characteristics
Ratings at 25 C ambient temperature, unless otherwise specified
VESD05A1-02V
BiAs mode (between pin 1 and pin 2) Parameter Protection paths Reverse stand off voltage Reverse current Reverse break down voltage Reverse clamping voltage at IPP = IPPM = 16 A; 8/20 s test pulse at IPP = 0.2 A; 8/20 s test pulse Forward clamping voltage at IPP = 1 A; 8/20 s test pulse at IPP = IPPM = 16 A; 8/20 s test pulse at VR = 0 V; f = 1 MHz Capacitance at VR = 2.5 V; f = 1 MHz CD 76 pF VC VF VF VF CD 10.5 0.88 1.0 3.2 130 12 1.1 1.5 4.5 150 V V V V pF Test conditions/remarks Number of lines which can be protected at IR = 1 A at VR = 5 V at IR = 1 mA at IPP = 1 A; 8/20 s test pulse Symbol Nlines VRWM IR VBR VC 6 5 < 0.1 6.8 7.2 1 7.5 8.5 Min. Typ. Max. 1 Unit lines V A V V
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 84702 Rev. 1.3, 27-Oct-08
VESD05A1-02V
Vishay Semiconductors Typical Characteristics
Tamb = 25 C, unless otherwise specified
120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 60 %
53 %
100
Discharge Current IESD
10
IF (mA)
1
0.1
40 %
27 %
20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100
20557
0.01
0.001 0.5
19335
0.6
0.7
0.8
0.9
Time (ns)
VF (V)
Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF)
Figure 4. Typical Forward Current IF vs. Forward Voltage VF
8 100 % 80 % 60 % 20 s to 50 % 40 % 20 % 1 0% 0
20548
8 s to 100 %
7 6 5
VR (V)
40
IPPM
4 3 2
10
20
30
0 0.01
19336
0.1
1
10
100
1000 10 000
Time (s)
IR (A)
Figure 2. 8/20 s Peak Pulse Current Wave Form acc. IEC 61000-4-5
Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR
150 f = 1 MHz 125 100
12 10 reverse 8
CD (pF)
VC (V)
75 50 25 0 0 1 2 3 4 5
6 4
Measured acc. IEC 61000-4-5 (8/20s - Waveform)
forward 2 0 0
19337
4
8
12
16
19334
VR (V)
IPP (A)
Figure 3. Typical Capacitance CD vs. Reverse Voltage VR
Figure 6. Typical Clamping Voltage vs. Peak Pulse Current IPP
Document Number 84702 Rev. 1.3, 27-Oct-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com 3
VESD05A1-02V
Vishay Semiconductors
50 40 30 20 VESD = + 8 kV acc. IEC 61000-4-2
VC-ESD (V)
10 0 - 10 - 20 - 30 - 40 - 50 - 10 0 10 20 30 40 50 60 70 80 90
19339
t (ns)
Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2)
50 40 30 20 VESD = - 8 kV acc. IEC 61000-4-2
VC-ESD (V)
10 0 - 10 - 20 - 30 - 40 - 50 - 10 0
19338
10 20 30 40 50 60 70 80 90
t (ns)
Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2)
200 150 100 Reverse: overshoot at pos. ESD
VC-ESD (V)
50 0 - 50 - 100 - 150 Forward: undershoot at neg. ESD - 200 0
19341
acc. IEC 61000-4-2 contact discharge
5
10
15
20
25
30
VESD (kV)
Figure 9. Typical Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2)
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 84702 Rev. 1.3, 27-Oct-08
VESD05A1-02V
Vishay Semiconductors Package Dimensions in millimeters (inches): SOD523
0.2 [0.008] 0.1 [0.004]
1.7 [0.067] 1.5 [0.059]
0.9 [0.035] 0.7 [0.028]
foot print recommendation:
0.4 [0.016]
1.45 [0.057]
0.35 [0.014] 0.25 [0.010]
1.3 [0.051] 1.1 [0.043] 0.35 [0.014]
Document no.: S8-V-3880.02-001 Rev. f - Date: 25. January. 2005 16864
Document Number 84702 Rev. 1.3, 27-Oct-08
0.7 [0.028] 0.5 [0.020]
For technical support, please contact: ESD-Protection@vishay.com
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VESD05A1-02V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 84702 Rev. 1.3, 27-Oct-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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