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| 16TTS..PbF High Voltage Series Vishay High Power Products Phase Control SCR, 10 A 2 (A) DESCRIPTION/FEATURES The 16TTS..PbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for RoHS* medium power switching and phase control COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix). TO-220AB 1 (K) (G) 3 PRODUCT SUMMARY VT at 10 A ITSM VRRM < 1.4 V 200 A 800/1200 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 C, TJ = 125 C, common heatsink of 1 C/W SINGLE-PHASE BRIDGE 13.5 THREE-PHASE BRIDGE 17 UNITS A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IRMS VDRM/VRRM ITSM VT dV/dt dI/dt TJ Range 10 A, TJ = 25 C Range (1) TEST CONDITIONS Sinusoidal waveform VALUES 10 16 800/1200 200 1.4 500 150 - 40 to 125 UNITS A V A V V/s A/s C Note (1) For higher voltage up to 1600 V contact factory VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 1200 IRRM/IDRM AT 125 C mA 10 16TTS08PbF 16TTS12PBF * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94603 Revision: 15-Sep-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 16TTS..PbF High Voltage Series Vishay High Power Products Phase Control SCR, 10 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IRMS ITSM I2 t I2t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 10 A, TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TEST CONDITIONS TC = 98 C, 180 conduction, half sine wave VALUES TYP. 10 16 170 200 144 200 2000 1.4 24.0 1.1 VR = Rated VRRM/VDRM 200 500 150 V/s A/s 0.5 10 100 mA A2s A2s V m V A MAX. UNITS Anode supply = 6 V, resistive load, initial IT = 1 A 16TTS08PbF, 16TTS12PBF Anode supply = 6 V, resistive load TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 65 C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C Anode supply = 6 V, resistive load, TJ = - 65 C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C VGD IGD TJ = 125 C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 90 60 35 3.0 2.0 1.0 0.2 2.0 mA V mA UNITS W A V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 C TJ = 125 C TEST CONDITIONS VALUES 0.9 4 110 s UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94603 Revision: 15-Sep-08 16TTS..PbF High Voltage Series Phase Control SCR, 10 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AB SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 1.3 62 0.5 2 0.07 6 (5) 12 (10) g oz. kgf * cm (lbf * in) C/W UNITS C Mounting torque Marking device 16TTS08 16TTS12 Document Number: 94603 Revision: 15-Sep-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 16TTS..PbF High Voltage Series Vishay High Power Products Phase Control SCR, 10 A 125 120 115 110 105 100 95 90 0 2 4 6 8 10 12 Average On-state Current (A) 30 60 90 120 180 Conduction Angle Maximum Allowable Case T emperature (C) 16T S S T .. eries R thJC (DC) = 1.3 C/ W Maximum Average On-state Power Loss (W) 25 DC 180 120 90 60 30 20 15 R Limit MS 10 Conduction Period 5 16T .. S TS eries TJ = 125C 0 2 4 6 8 10 12 14 16 18 0 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case T emperature (C) Peak Half S Wave On-s ine tate Current (A) 125 120 115 Conduction Period 16T S S T .. eries R thJC (DC) = 1.3 C/ W 180 160 At Any Rated Load Condition And With Rated V RRMApplied Following S urge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 110 105 100 95 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) 30 140 120 60 90 120 180 DC 100 16T S eries T ..S 80 1 10 100 Number Of Equa l Amplitud e Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-s tate Power Los (W) s Peak Half S Wave Forward Current (A) ine 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 Average On-state Current (A) Conduction Angle 200 180 160 140 120 100 180 120 90 60 30 R Limit MS Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial TJ= 125C No Vo ltage Reap plied R ted VRRM Rea pplied a 16T .. S TS eries T J = 125C 16T S S T .. eries 80 0.01 0.1 Pulse T rain Duration (s) 1 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94603 Revision: 15-Sep-08 16TTS..PbF High Voltage Series Phase Control SCR, 10 A Vishay High Power Products 1000 Ins tantaneous On-state Current (A) 16T S S T .. eries 100 10 T = 25C J TJ= 125C 1 0 1 2 3 4 5 Instantaneous On-s tate Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Impedanc e Z thJC (C/ W) 10 S teady S tate Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 16T S S T .. eries 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) R tangular gate pulse ec a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/ dt: 10 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a ) (b ) T = -10 C J T = 25 C J T = 125 C J 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) 16T S S T .. eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Document Number: 94603 Revision: 15-Sep-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 16TTS..PbF High Voltage Series Vishay High Power Products Phase Control SCR, 10 A ORDERING INFORMATION TABLE Device code 16 1 1 2 3 4 5 6 T 2 - T 3 S 4 12 5 PbF 6 Current rating Circuit configuration: T = Single thyristor Package: T = TO-220AB Type of silicon: S = Converter grade Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 08 = 800 V 12 = 1200 V Note: For higher voltage up to 1600 V contact factory LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95222 http://www.vishay.com/doc?95225 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94603 Revision: 15-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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