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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5597 2N5599 2N5601 2N5603 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N5597 Collector-base voltage 2N5599/5601 2N5603 VCEO Collector-emitter voltage INC NG S HA 2N5597 2N5603 CON EMI Open emitter Open base Open collector TOR DUC VALUE -80 -100 -120 -60 -80 -100 -5 -2 UNIT V 2N5599/5601 V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature V A W ae ae TC=25ae 20 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5597 VCEO(SUS) Collector-emitter sustaining voltage 2N5599/5601 2N5603 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5597 2N5599 2N5601 2N5603 SYMBOL CONDITIONS MIN -60 TYP. MAX UNIT IC=-50mA ;IB=0 -80 -100 V IC=-1A; IB=-0.1A IC=-1A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=-5V; IC=0 70 -1.0 -1.5 -0.1 -1.0 -0.1 V V mA mA mA hFE DC current gain 2N5597/5601 IC=-1A ; VCE=-5V 2N5599/5603 2N5597/5601 fT Transition frequency INCH NG S A 2N5599/5603 IC=-0.5A ; VCE=-10V CON EMI TOR DUC 200 90 30 60 MHz 50 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5597 2N5599 2N5601 2N5603 NG S HA INC CON EMI TOR DUC Fig.2 outline dimensions 3 |
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