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| SMD Type PNP Silicon Epitaxia 2SA1461 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High speed switching: tstg=110ns. High gain bandwidth product: fT=510MHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating -40 -40 -5 -200 200 Unit V V V mA mW Maximum Junction temperature Maximum Storage temperature Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350is,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -30V, IE=0 VEB = -3V, IC=0 VCE = -1V , IC = -10mA VCE = -1V , IC = -100mA VCE(sat) IC = -50mA , IB = -5mA VBE(sat) IC = -50mA , IB = -5mA fT Cob ton tstg toff VCE = -20V , IE = 10mA VCB = -5V , IE = 0 , f = 1.0MHz VCC = -3V , IC = -10mA , IB1 = -IB2 = -1mA 110 200 75 25 180 100 -0.1 -0.8 510 2.5 4.5 70 225 300 -0.4 -0.95 V V MHz pF ns ns ns Min Typ Max -100 -100 300 Unit nA nA hFE Classification Marking hFE Y22 75 150 Y23 100 200 Y24 150 300 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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