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| SMD Type Low Frequency Transistor 2SB1197K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Features Low VCE(sat).VCE(sat) IC = -0.8A. +0.1 2.4-0.1 Unit: mm PNP silicon transistor +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 -0.5V IC / IB= -0.5A / -50mA . 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -5 -0.8 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltae Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-Emitter Saturation Voltage DC current transfer ratio Output Capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO IC = -50 IC = -1mA IE = -50 A A Testconditons Min -40 -32 -5 -0.5 -0.5 -0.5 120 12 200 390 30 pF MHz Typ Max Unit V V V A A V VCB = -20V VEB = -4V VCE(sat) IC = -0.5A , IB = -50mA hFE Cob fT VCE = -3V , IC = -100mA VCB = -10V , IE = 0A , f = 1MHz VCE = -5V , IE = 50mA , f = 100MHz hFE Classification Marking Rank hFE 120 AHQ Q 270 180 AHR R 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
Price & Availability of 2SB1197K
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