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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3873 DESCRIPTION With TO-3PFa package High VCBO High speed switching Good linearity of hFE Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 500 400 7 12 22 5 UNIT V V V A A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Base current TC=25ae 100 W 3 150 -55~150 ae ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3873 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA;IB=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=10V 15 MIN 400 1.0 1.5 100 100 |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf IN Fall time Turn-on time Storage time CHA E SEM NG OND IC TOR UC 8 30 0.7 2.0 0.3 MHz |I |I |I s s s IC=7A; VCC=150V IB1=1.4A;IB2=-2.8A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3873 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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