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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION With TO-3PL package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 7 15 25 5 UNIT V V V A A A Emitter-base voltage Open collector Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 3.5 W 150 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=10A ;IB=2A IC=10A ;IB=2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V;f=1MHz 15 8 MIN 400 2SC3874 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 |I |I V V A A Switching times ton tstg tf Fall time CHA IN Storage time Turn-on time E SEM NG OND IC TOR UC 20 0.7 2.0 0.3 MHz |I |I |I s s s IC=10A; VCC=150V IB1=2A;IB2=-4A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3874 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3874 CHA IN E SEM NG OND IC TOR UC 4 |
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