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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4054 DESCRIPTION With ITO-220 package Switching power transistor High voltage ,high speed PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter Open base Open collector Collector-emitter voltage Emitter-base voltage CHA IN Collector current Base current Base current-Peak Collector current-Peak E SEM NG TC=25ae OND IC TOR UC 600 450 7 5 10 2 4 30 150 -55~150 VALUE UNIT V V V A A A A W ae ae Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated volatge IC=2.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.5A ; VCE=10V 10 5 CONDITIONS IC=0.1A ;IB=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A MIN 450 TYP. 2SC4054 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO MAX UNIT V 1.0 1.5 V V 0.1 mA 0.1 mA Switching times ton ts tf Fall time CHA IN Turn-on time Storage time E SEM NG OND IC TOR UC 20 0.5 2.0 0.2 MHz |I |I |I s s s IC=2.5A;IB1=0.5A IB2=1A ,RL=60| VBB2=4V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4054 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4054 CHA IN E SEM NG OND IC TOR UC 4 |
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