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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter Open base Collector-emitter voltage Emitter-base voltage CHA IN Base current Base current-Peak Collector current (DC) Collector current-Peak E SEM NG TC=25ae Open collector OND IC TOR UC 600 450 7 8 16 4 8 80 150 -55~150 VALUE UNIT V V V A A A A W ae ae Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=4A ; VCE=5V IC=1mA ; VCE=5V IC=0.8A ; VCE=10V 10 5 CONDITIONS IC=0.2A; IB=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A MIN 450 TYP. 2SC4057 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO MAX UNIT V 1.0 1.5 V V 0.1 mA 0.1 mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time CHA IN E SEM NG OND IC TOR UC 20 0.5 2.0 0.2 MHz |I |I |I s s s IC=4A IB1=0.8A; IB2=1.6A VBB2=4V ,RL=37.5| 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4057 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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