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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4687 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 500 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 7 Emitter-base voltage Open collector Collector current Collector current-peak Base current Ta=25ae 7 14 3 2.5 UNIT V V V A A A PC Collector power dissipation TC=25ae 60 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=5mA ; IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V 15 8 MIN 400 500 7 2SC4687 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V 1.0 1.5 100 100 |I |I V V A A TOR NDU ICO E SEM ANG INCH Transition frequency IC=0.5A ; VCE=10V 30 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4687 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions 3 |
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