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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION With TO-126 package Complement to type 2SB649/649A High breakdown voltage VCEO:120/160V High current 1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 180 2SD669 Collector-base voltage Open emitter 2SD669A 2SD669 180 120 Open base 2SD669A 160 Open collector 5 1.5 3 Ta=25ae 1 Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak UNIT V VCEO V VEBO IC ICM V A A PD Total power dissipation TC=25ae 20 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD669 IC=10mA; RBE= 2SD669A 2SD669 IC=1m A ;IE=0 2SD669A IE=1mA ;IC=0 IC=0.5A ;IB=50mA IC=150mA ; VCE=5V VCB=160V; IE=0 2SD669 hFE-1 DC current gain IC=150mA ; VCE=5V 2SD669A CONDITIONS 2SD669 2SD669A SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 160 180 V 180 5 1.0 1.5 10 60 60 320 200 |I V V V A V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE ICBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current hFE-2 fT COB hFE Classifications hFE-1 2SB649 2SB649A B 60-120 60-120 TOR NDU ICO E SEM ANG INCH DC current gain IC=0.5A ; VCE=5V 30 Transition frequency IC=150mA ; VCE=5V f=1MHz ; VCB=10V 140 14 Collector output capacitance MHz pF C 100-200 100-200 D 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD669 2SD669A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A TOR NDU ICO E SEM ANG INCH 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A TOR NDU ICO E SEM ANG INCH 5 |
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