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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD798
DESCRIPTION With TO-220 package High voltage DARLINGTON APPLICATIONS With switching and igniter applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS MAX 600 Collector-base voltage Open emitter Collector-emitter voltage Open base 300 5 Emitter-base voltage Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 6 1 30 150 -55~150
UNIT V V V A A W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.5A ;L=40mH IC=4A ;IB=0.04A IC=4A ;IB=0.04A VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz;VCB=50V 1500 200 35 MIN 300 TYP.
2SD798
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB
MAX
UNIT V
2.0 2.5 0.5 0.5
V V mA mA
Switching times ton tstg tf
TOR NDU ICO E SEM ANG INCH
Turn-on time 1 Storage time Fall time IB1=-IB2=0.04A VCCO 100V,RL=25| 8 |I |I 5
pF
|I
s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD798
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions
3


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