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| SMD Type Small Switching 2SK3050 TO-252 +0.15 1.50-0.15 Transistors IC Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-resistance. Fast switching speed. +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 Gate-source voltage (VGSS) guaranteed to be Easily designed drive circuits. Easy to use in parallel. Silicon N-channel MOSFET 30V. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 Wide SOA (safe operating area). 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current (pulse) * Body to drain diode reverse drain current Body to drain diode reverse drain current(pulse) * Total power dissipation (Tc=25 ) Channel Temperature Storage temperature * PW 10is,Dduty cycle 1%. Symbol VDSS VGSS ID IDP IDR IDRP PD Tch Tstg Rating 600 30 2 6 2 6 20 150 -55 to +150 Unit V V A A A A W Electrical Characteristics Ta = 25 Parameter Gate to source leak current Drain to source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static Drain to source on stateresistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Symbol IGSS Testconditons VGS= 30V, VDS=0V 600 100 2.0 4.4 0.5 1.0 280 48 16 12 17 29 105 460 2.0 4.0 5.5 S pF pF pF ns ns ns ns ns C Min Typ Max 100 Unit nA V A V V(BR)DSS ID=1mA, VGS=0V IDSS VGSth VDS=600V, VGS=0V VDS=10V, ID=1mA RDS(on) ID=1A, VGS=10V |yfs| Ciss Coss Crss td(on) tr td(off) tf trr Qrr ID=1A, VDS=10V VDS=10V VGS=0V f=1MHz VGS=10V RL=300 RG=10 ID=1A, VDD=300V IDR=2A, VGS=0V di/dt=100A/ s 3.80 www.kexin.com.cn 1 |
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