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SMD Type
MOS Field Effect Transistor 2SK3431
TO-263
Features
Super low on-state resistance: RDS(on)1 = 5.6m RDS(on)2 = 8.9 m MAX. (VGS = 10 V, ID = 42 A)
+0.2 8.7-0.2 +0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
MAX. (VGS = 4 V, ID = 42 A)
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
Low Ciss: Ciss = 6100 pF TYP.
+0.2 5.28-0.2
Built-in gate protection diode
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 40 20 83 332 100 1.5 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =83A, VDD =32V, VGS = 10 V ID=42A,VGS(on)=10V,RG=10 ,VDD=20V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=40V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=42A VGS=10V,ID=42A VGS=4V,ID=42A 1.5 30 2.0 60 4.5 6.2 6100 1400 700 120 1800 350 440 110 18 31 5.6 8.9 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC
5.60
1 Gate 2 Drain 3 Source
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