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AOD4191L P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The device well suited for high current applications.
Features
VDS (V) = -40V ID = -34A RDS(ON) < 25m RDS(ON) < 34m (V GS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested! 100% R g Tested!
-RoHS Compliant -Halogen Free*
Top View D
TO-252 D-PAK
Bottom View D
S G S
G
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation
A C C
Maximum -40 20 -34 -24 -70 -7 -6 -31 48 50 25 2.5 1.6 -55 to 175
Units V V
VGS TC=25C TC=100C TC=25C TC=100C ID IAR EAR PD PDSM TJ, TSTG ID IDM
A
A mJ W W C
TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 16.7 40 2.5
Max 25 50 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-8A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-12A IS=-1A,VGS=0V Conditions ID=-250A, VGS=0V VDS=-40V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-12A TJ=125C -1.7 -70 20.5 31 27 30 -0.74 -1 -45 1200 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 125 90 2 24 VGS=-10V, VDS=-20V, ID=-12A 11 3.5 4.5 VGS=-10V, VDS=-20V, RL=1.6, RGEN=3 IF=-12A, dI/dt=500A/s 15 56 1440 160 125 5 29 14 4.3 6.7 9.6 16.8 38 22 18 68 22 82 1750 200 175 10 35 17 5.5 9.4 25 38 34 -1.9 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(-10V) Total Gate Charge Qg(-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=500A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 1 : Oct-2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 60 50 -ID (A) -ID(A) 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance 35 RDS(ON) (m ) VGS=-4.5V 30 25 VGS=-10V 20 15 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-8A VGS=-10V ID=-12A VGS=-3V 10 -4V -3.5V 30 125C 20 25C -10V -6V -5V -4.5V 40 50 VDS=-5V
0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics
75 ID=-12A 60
100 10 1 125C -IS (A) 0.1 0.01 25C 0.001 25C 0.0001 0.00001 0.000001
RDS(ON) (m )
45
125C
30
15
0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=-20V ID=-12A A Capacitance (pF) 100s 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 25 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 30 0 0 5 15 20 25 30 35 -VDS (Volts) Figure 8: Capacitance Characteristics 10 40 Crss Coss Ciss
8
-VGS (Volts)
6
4
2
100.0 10s RDS(ON) limited -ID (Amps) 10.0 DC 1ms 10ms 1.0 100s Power (W)
200 160 120 80 40 TJ(Max)=175C, T C=25C 0 0.0001
TJ(Max)=175C TC=25C
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Z JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 1 10 100
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 -ID(A), Peak Avalanche Current 70 60 50 40 30 20 10 0.000001 TA=125C TA=150C TA=25C Power Dissipation (W) 50 40 30 20 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F) 60
TA=100C
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
40 35 Current rating -ID(A) 30 Power (W) 25 20 15 10 5 0 0 25 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F) 50 175
60 50 40 30 20 10 0 0.001 TA=25C
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD Single Pulse Ton 0.001 0.00001 T 100 1000
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & Waveforms
RL Vds Vgs Vgs Rg DUT
VDC
Vgs Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds -
Isd Vgs
L
VDC
+ Vdd -Vds
Ig
Alpha & Omega Semiconductor, Ltd.
+
-
+
-
+
Charge
ton td(on) tr td(off) toff tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
EAR= 1/2 LIAR
2
Vds BVDSS Vdd Id I AR
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
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