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SRFET
TM
AON7704 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET AON7704/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. - RoHS Compliant. - Halogen Free
DFN 3x3 Top View Bottom View
Features
VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 20m (VGS = 10V) RDS(ON) < 31m (VGS = 4.5V)
D S S S G D D D D
Pin 1
G
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current B Power Dissipation Power Dissipation
B C
Maximum 30 20 14 14 50 10 7.5 35 14 3.1 2 -55 to 150
Units V V
TC=25C TC=100C TA=25C TA=70C TC=25C TC=100C TA=25C
A
ID IDM IDSM PD PDSM TJ, TSTG
A
W
TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D
C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 30 60 4.5
Max 40 75 5.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7704
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 50 16 23 25 23 0.4 0.5 6 696 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.6 200 80 1.2 12.4 VGS=10V, VDS=15V, ID=10A 6.1 2.04 2.7 2.6 VGS=10V, VDS=15V, RL=1.5, RGEN=3 IF=10A, dI/dt=100A/s 6.8 17 3.6 20.2 7.9 26 1.8 16 8 900 20 28 31 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m 1.7 Min 30 0.1 20 100 3 Typ Max Units V mA nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G.The maximum current rating is limited by bond-wires. Rev0: Sept 2007
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 10V 60 8.0V 6.0V 30 VDS=5V 25 20 ID (A) ID(A) 40 4.5V 4.0V 20 3.5V VGS=3.0V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance VGS=10V ID=10A VGS=4.5V ID=8A 15 10 125C 5 25C
35 30 RDS(ON) (m) 25 20 15 10 0 5 10 15 20 25 VGS=10V
VGS=4.5V
1.4
1.2
1
0.8
0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50 ID=10A 40 RDS(ON) (m)
10
150
125C
1 25C IS (A) 125C 25C 0.001 3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) 4.5 5.5 Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
30
0.1
20
0.01
10
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=10A Capacitance (pF) 1000 800 600 400 200 0 Crss VDS (Volts) Figure 8: Capacitance Characteristics Coss
Ciss
100 RDS(ON) limited
10s 100s 1ms
1000 TJ(Max)=150C TA=25C Power (W) 100
10
ID (Amps)
1
10ms 100ms 1s TJ(Max)=150C TA=25C 0.1 1 DC 10s
10
0.1
0.01 10 100
1 0.0001 0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W
150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.00001 Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
4.5 5.5 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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