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 BT134 series
Triacs logic level
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER BT134VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600 600 4 25 V A A UNIT
PINNING - TO126
PIN 1 2 3 2 DESCRIPTION main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2 gate
1 23
T1
G
LIMITING VALUES
L SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 107 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 MAX. 6001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over any 20 ms period
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. June 2001 1 Rev 1.400
BT134 series
Triacs logic level
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 60 MAX. 3.0 3.7 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT134VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.4 0.7 0.4 0.1 35 35 35 70 20 30 20 30 15 1.70 1.5 0.5 MAX. ...F 25 25 25 70 20 30 20 30 15 mA mA mA mA mA mA mA mA mA V V V mA UNIT
IL
Latching current
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT134VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 TYP. 250 MAX. UNIT V/s
dVcom/dt
-
-
50
-
V/s
tgt
-
-
2
-
s
June 2001
2
Rev 1.400
BT134 series
Triacs logic level
8 7 6 5 4 3 2 1 0
Ptot / W
Tmb(max) / C
101 104
5
IT(RMS) / A
1
= 180 120 90 60 30
107 110 113 116 119
4
107 C
3
2
1
122 0 1 2 3 IT(RMS) / A 4 125 5
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
IT(RMS) / A
1000
ITSM / A IT T ITSM
12 10
time
Tj initial = 25 C max 100 dIT /dt limit
8 6 4
T2- G+ quadrant
2
10 10us
100us
1ms T/s
10ms
100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 107C.
VGT(Tj) VGT(25 C)
30 25 20 15 10 5 0
ITSM / A
BT136
1.6
IT T I TSM time
1.4 1.2 1 0.8 0.6 0.4 -50
Tj initial = 25 C max
1
10 100 Number of cycles at 50Hz
1000
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.
June 2001
3
Rev 1.400
BT134 series
Triacs logic level
3 2.5 2 1.5 1 0.5
IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+
12 10
IT / A Tj = 125 C Tj = 25 C
Vo = 1.27 V Rs = 0.091 ohms
typ
max
8 6 4 2 0
0 -50
0
50 Tj / C
100
150
0
0.5
1
1.5 VT / V
2
2.5
3
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-mb (K/W) unidirectional bidirectional
3 2.5
1
2 1.5 1 0.5 0 -50
0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 0.1
P D tp
t
0
50 Tj / C
100
150
10s
Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)
Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dVcom/dt (V/us) 1000 off-state dV/dt limit
3 2.5
BT136 SERIES
2 1.5 1 0.5 0 -50
100
BT136...F SERIES
10
dIcom/dt = 5.1 3.9 A/ms
0 50 Tj / C 100 150
3
2.3
1.8 100
1.4 150
1 0 50 Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.
Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.
June 2001
4
Rev 1.400


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