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| SMD Type HEXFET Power MOSFET KRF7325 IC IC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Drain Lead Maximum Junction-to-Ambient *2 VGS TJ, TSTG R R JL JA Symbol VDS ID ID IDM Rating -12 -7.8 -6.2 -39 2.0 1.3 16 8.0 -55 to + 150 20 62.5 Unit V A @Ta= 25 @Ta = 70 PD PD W W W/ V /W /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 When mounted on 1 inch square copper board. www.kexin.com.cn 1 SMD Type KRF7325 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -7.8A*1 Min -12 Typ Max Unit V 0.007 24 33 49 -0.40 17 -1.0 -25 -100 100 22 5.0 4.7 9.4 9.8 240 180 33 7.5 7.0 -0.90 V/ Static Drain-to-Source On-Resistance RDS(on) VGS = -2.5V, ID = -6.2A*1 VGS = -1.8V, ID = -3.9A*1 m Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -7.8A*1 VDS = -9.6V, VGS = 0V VDS = -9.6V, VGS = 0V, TJ = 70 V S A IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr VGS = -8.0V VGS = 8.0V ID = -7.8A VDS = -6.0V VGS = -4.5V VDD = -6.0V,VGS=-4.5V ID = -1.0A RG = 6 nA nC ns VGS = 0V VDS = -10V f = 1.0MHz 2020 520 330 -2.0 A -39 pF Body Diode) *2 TJ = 25 , IS = -2.0A, VGS = 0V*1 TJ = 25 , IF =-2.0A di/dt = -100A/ s*1 36 28 -1.2 54 42 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn |
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