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| MIG150J6CSB1W MITSUBISHI SEMICONDUCTOR MIG150J6CSB1W (600V/150A 6in1) High Power Switching Applications Motor Control Applications * * * * * Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.9 V (typ.) UL recognized: File No. E87989 Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open V 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. B VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 2004-10-01 1/10 MIG150J6CSB1W Package Dimensions 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 2/10 MIG150J6CSB1W Signal Terminal Layout 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 3/10 MIG150J6CSB1W Maximum Ratings (Tj = 25C) Stage Characteristics Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque (terminal) Screw torque (mounting) AC 1 min M4 M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C, DC VD-GND Terminal IN-GND Terminal FO-GND Terminal FO sink current Condition P-N power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Tc Tstg VISO Ratings 450 600 150 150 740 150 20 20 20 14 -20 to +100 -40 to +125 2500 2 3 Unit V V A A W C V V V mA C C V Nm Nm Electrical Characteristics 1. Inverter Stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 150 A VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1.6 VCC = 300 V, IC = 150 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Typ. 1.9 2.1 2.4 1.3 0.3 0.2 1.1 0.2 Max 1 10 2.3 2.8 2.2 2.1 s V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 150 A, Tj = 25C Switching time trr toff tc (off) Note 1: Switching time test circuit and timing chart 2004-10-01 4/10 MIG150J6CSB1W 2. Control Stage (Tj = 25C) Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Over current protection trip level Short circuit protection trip level Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT OTr UV UVr tFO VD = 15 V VD = 15 V Test Condition Min 1.4 2.2 240 240 110 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 51 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V V Unit mA VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature V 3. Thermal Resistance (Tc = 25C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT Inverter FRD Compound is applied Min Typ. 0.017 Max 0.167 0.313 C/W Unit C/W 2004-10-01 5/10 MIG150J6CSB1W Switching Time Test Circuit Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 22 F GND VS P GND U (V, W) VCC VD IF = 16 mA PG 15 V 22 F GND 0.1 F 15 k OUT IN VS N GND Timing Chart Input Pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% 10% tc (off) 10% 10% tc (on) toff ton 2004-10-01 6/10 MIG150J6CSB1W 4. Recommended conditions for application Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (see page.6) (Note 2) Min 13.5 3 Typ. 300 15 Max 400 16.5 20 Unit V V kHz s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG150J6CSB1W IC - VCE 300 VD = 17 V 250 13 V 250 15 V 200 300 IC - VCE VD = 17 V 13 V IC (A) IC (A) 200 15 V Collector current 150 Collector current 150 100 100 50 Common emitter Tj = 25C 0 0 1 2 3 4 50 Common emitter Tj = 125C 0 0 1 2 3 4 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 5 3 10 5 3 Switching time - IC (s) 1 0.5 0.3 (s) ton toff ton toff 1 0.5 0.3 tc (on) tc (off) Switching time tc (on) tc (off) 0.1 0.05 0.03 Tj = 25C VCC = 300 V VD = 15 V L-Load 50 100 150 200 Switching time 0.1 0.05 0.03 Tj = 125C VCC = 300 V VD = 15 V L-Load 50 100 150 200 0.01 0 0.01 0 Collector current IC (A) Collector current IC (A) IF - VF 300 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x10 ns) Irr 250 (A) 30 trr 10 Forward current IF 200 150 100 Common cathode 50 :Tj = 25C :Tj = 125C 3 Common cathode :Tj = 25C :Tj = 125C 0 0 1 2 3 4 1 0 50 100 150 200 Forward voltage VF (V) Forward current IF (A) 2004-10-01 8/10 MIG150J6CSB1W OC - TC (mA) 400 30 ID (H) - fc Over current protection trip level OC (A) Inverter stage 300 ID (H) High side control circuit current 25 20 200 15 10 100 5 VD = 15 V 0 0 25 50 75 100 125 150 VD = 15 V Tj = 25C 5 10 15 20 25 0 0 Case temperature TC (C) Carrier frequency fc (kHz) ID (L) - fc (mA) 120 280 Reverse bias SOA OC ID (L) 100 240 IC (A) Collector current VD = 15 V Tj = 25C 200 Low side control circuit current 80 160 120 60 40 80 20 40 0 0 5 10 15 20 25 0 0 Tj < 125C = VD = 15 V 100 200 300 400 500 600 700 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw Inverter stage (C/W) 1 0.5 0.3 Tc = 25C Diode Rth (t) 0.1 0.05 0.03 Transistor Transient thermal resistance 0.01 0.005 0.003 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) 2004-10-01 9/10 MIG150J6CSB1W Turn on loss - IC 100 100 Turn off loss - IC (mJ) 10 (mJ) Eoff 10 Eon Turn on loss 0.1 Turn off loss 1 1 0.01 0 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 50 100 150 200 0.1 0.01 0 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 50 100 150 200 Collector current IC (A) Collector current IC (A) 2004-10-01 10/10 |
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