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| ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES * Metal case with ceramic insulator * All diffused design * Center amplifying gate * International standard case TO-200AB (A-PUK) TO-200AB (A-PUK) RoHS COMPLIANT * Guaranteed high dV/dt * Guaranteed high dI/dt * High surge current capability * Low thermal impedance * High speed performance PRODUCT SUMMARY IT(AV) 370 A TYPICAL APPLICATIONS * * * * Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 370 Ths 55 690 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Range 25 4900 A 5130 120 110 400 to 800 10 to 20 - 40 to 125 V s C kA2s UNITS A C A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST183C..C 08 800 900 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 40 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94368 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit 770 730 600 350 50 VDRM 50 40 47/0.22 660 600 490 270 1220 1270 1210 860 50 VDRM - 1160 1090 1040 730 5450 2760 1600 800 50 VDRM - 4960 2420 1370 680 V A/s 55 47/0.22 C /F A 55 40 47/0.22 55 40 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 370 (130) 55 (85) 690 4900 5130 4120 Sinusoidal half wave, initial TJ = TJ maximum 4310 120 110 85 78 1200 1.80 1.40 1.45 0.67 0.58 600 1000 m V kA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94368 Revision: 30-Apr-08 ST183CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time minimum Maximum turn-off time maximum tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code VALUES 1000 1.1 10 20 s UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 40 UNITS V/s mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.17 0.08 0.033 0.017 4900 (500) 50 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style RthC-hs TO-200AB (A-PUK) Document Number: 94368 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.015 0.018 0.024 0.035 0.060 DOUBLE SIDE 0.016 0.019 0.024 0.035 0.060 RECTANGULAR CONDUCTION SINGLE SIDE 0.011 0.019 0.026 0.036 0.060 DOUBLE SIDE 0.011 0.019 0.026 0.037 0.061 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 130 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 120 110 100 90 80 70 60 50 40 0 40 80 30 ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 80 70 60 50 30 40 30 ST183C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W O O Conduction angle Conduction angle 60 90 180 120 60 90 180 120 120 160 200 240 0 50 100 150 200 250 300 350 400 450 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 3 - Current Ratings Characteristics 130 120 130 Maximum Allowable Heatsink Temperature (C) 110 100 90 80 70 60 50 40 30 20 0 50 100 150 Maximum Allowable Heatsink Temperature (C) ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 80 70 60 50 40 30 20 ST183C..C Series (Double side cooled) RthJC (DC) = 0.08 K/W O O Conduction period Conduction period 30 60 90 120 180 DC 90 30 60 120 0 100 200 300 400 180 DC 200 250 300 350 400 500 600 700 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Average On-State Current (A) Fig. 4 - Current Ratings Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94368 Revision: 30-Apr-08 ST183CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 1000 900 5000 180 120 90 60 30 RMS limit 4500 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied Maximum Average On-State Power Loss (W) 700 600 500 400 300 200 100 0 0 50 Peak Half Sine Wave On-State Current (A) 800 4000 3500 3000 2500 2000 0.01 O Conduction angle ST183C..C Series TJ = 125 C 100 150 200 250 300 350 400 450 ST183C..C Series 0.1 1 Average On-State Current (A) Fig. 5 - On-State Power Loss Characteristics Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Maximum Average On-State Power Loss (W) 1200 1000 800 600 400 200 0 0 100 DC 180 120 90 60 30 RMS limit Instantaneous On-State Voltage (A) 1400 10 000 ST183C..C Series 1000 TJ = 25 C TJ = 125 C O Conduction period ST183C..C Series TJ = 125 C 200 300 400 500 600 700 100 1 1.5 2 2.5 3 3.5 4 4.5 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 4500 1 Peak Half Sine Wave On-State Current (A) 4000 ZthJ-hs - Transient Themal Impedance (K/W) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s ST183C..C Series 0.1 3500 3000 0.01 2500 ST183C..C Series 2000 1 10 100 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 0.1 1 10 0.001 0.001 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics Document Number: 94368 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A 250 160 ST183C..C Series TJ = 125 C ITM = 500 A 140 ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A Qrr - Maximum Reverse Recovery Charge (C) Irr - Maximum Reverse Recovery Current (A) 200 300 A 200 A 120 100 80 60 40 20 150 100 A 100 50 A 50 ST183C..C Series TJ = 125 C 0 0 20 40 60 80 100 0 0 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/s) Fig. 11 - Reverse Recovered Charge Characteristics dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Reverse Recovery Current Characteristics 10 000 Peak On-State Current (A) 1000 500 50 Hz 400 200 100 Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 500 50 Hz 400 200 100 1000 1000 3000 5000 1500 2500 1000 1500 2500 3000 5000 10 000 10 000 tp ST183C..C Series Sinusoidal pulse TC = 40 C 1000 10 000 tp ST183C..C Series Sinusoidal pulse TC = 55 C 1000 10 000 100 10 100 100 10 100 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics Pulse Basewidth (s) 10 000 Peak On-State Current (A) 400 200 100 50 Hz Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 500 400 200 100 50 Hz 1000 2500 3000 5000 500 1500 1000 1000 1500 1000 2500 3000 5000 tp ST183C..C Series Trapezoidal pulse TC = 40 C dI/dt = 50 A/s 1000 10 000 tp ST183C..C Series Trapezoidal pulse TC = 55 C dI/dt = 50 A/s 1000 10 000 100 10 100 100 10 100 Pulse Basewidth (s) Fig. 14 - Frequency Characteristics Pulse Basewidth (s) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94368 Revision: 30-Apr-08 ST183CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 500 2500 3000 1500 400 200 100 10 000 Peak On-State Current (A) 50 Hz Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 500 400 200 50 Hz 100 1000 1000 1500 2500 3000 1000 100 5000 10 000 100 5000 10 000 tp ST183C..C Series Trapezoidal pulse TC = 40 C dI/dt = 100 A/s 1000 10 000 tp ST183C..C Series Trapezoidal pulse TC = 55 C dI/dt = 100 A/s 1000 10 000 10 10 100 10 10 100 Pulse Basewidth (s) Fig. 15 - Frequency Characteristics 100 000 100 000 Pulse Basewidth (s) Peak On-State Current (A) Peak On-State Current (A) tp ST183C..C Series Rectangular pulse dI/dt = 50 A/s 20 joules per pulse 10 10 000 1 0.5 0.3 0.2 0.1 2 4 20 joules per pulse 10 10 000 2 4 1000 1000 0.2 0.3 0.5 1 100 ST183C..C Series Sinusoidal pulse tp 100 0.1 10 10 100 1000 10 000 10 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s (a) (b) TJ = 40 C (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms TJ = 25 C TJ = 125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST183C..C Series 0.1 1 Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94368 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 18 2 - 3 3 C 4 08 5 C 6 H 7 K 8 9 1 10 P 11 Thyristor Essential part number 3 = Fast turn-off C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case TO-200AB (A-PUK) Reapplied dV/dt code (for tq test condition) tq code 0 = Eyelet terminals (gate and aux. cathode unsoldered leads) 1 = Fast-on terminals 2 = Eyelet terminals (gate and aux. cathode soldered leads) 3 = Fast-on terminals (gate and aux. cathode soldered leads) dV/dt - tq combinations available dV/dt (V/s) 10 12 tq (s) 15 18 20 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN* FM FL* FP FK 400 HN HM HL HP HK * Standard part number. (gate and aux. cathode unsoldered leads) All other types available only on request. 10 - 11 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95074 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94368 Revision: 30-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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