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ST303SPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Stud Version), 300 A
FEATURES
* Center amplifying gate * High surge current capability * Low thermal impedance * High speed performance * Compression bonding * Lead (Pb)-free * Designed and qualified for industrial level
TO-209AE (TO-118)
RoHS
COMPLIANT
TYPICAL APPLICATIONS
* Inverters
PRODUCT SUMMARY
IT(AV) 300 A
* Choppers * Induction heating * All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ TEST CONDITIONS VALUES 300 TC 65 471 7950 8320 316 288 400 to 1200 10/20 - 40 to 125 V s C kA2s A UNITS A C
I2 t
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 ST303S 08 12 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1300 50 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 94375 Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
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ST303SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 300 A
CURRENT CARRYING CAPABILITY
ITM 180 el 180 el ITM 100 s ITM
FREQUENCY
UNITS
50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage VR Voltage before turn-on VD Rise of on-state current di/dt Case temperature Equivalent values for RC circuit
670 480 230 35 50 VDRM 50 40 10/0.47
470 330 140 -
1050 1021 760 150 50 VDRM -
940 710 470 -
5240 1800 730 90 50 VDRM -
4300 1270 430 V A/s 65 10/0.47 C /F A
65
40 10/0.47
65
40
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 45 C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 300 65 471 7950 8320 6690 Sinusoidal half wave, initial TJ = TJ maximum 7000 316 288 224 204 3160 2.16 1.44 1.46 0.57 0.56 600 1000 m V kA2s kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A
mA
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Document Number: 94375 Revision: 30-Apr-08
ST303SPbF Series
Inverter Grade Thyristors (Stud Version), 300 A
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time minimum Maximum turn-off time maximum tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt = 200 V/s VALUES 1000 0.80 10 20 s UNITS A/s
Vishay High Power Products
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V
TJ = TJ maximum, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.10 0.03 48.5 (425) 535 UNITS C
K/W N*m (lbf * in) g
TO-209AE (TO-118)
Document Number: 94375 Revision: 30-Apr-08
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ST303SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 300 A
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.011 0.013 0.017 0.025 0.041 RECTANGULAR CONDUCTION 0.008 0.014 0.018 0.026 0.042 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Maximum Allowable Case T emperature (C)
Maximum Allowable Case T emperature (C)
130 120 110 100 90 80 70 60 0 50 100 150 200 250 300 350 Average On-state Current (A)
Conduc tion Angle
S 303SS T eries RthJC (DC) = 0.10 K/ W
130 120 110 100 90 80 70 60 50 40 0 100
S 303SS T eries R (DC) = 0.10 K/ W
thJC
Conduction Period
30 60 90 120 180
30 60 90 120 200 180
DC 400 500
300
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
600
h Rt
03 0.
500 400 300 200
180 120 90 60 30 R Limit MS
Conduction Angle
K/ W 0. 08 K/ W 0. 12 K/ W 0.1 6K /W 0.2 K/ W 0.3 K/ W
0.5 K / W
0. 06
W K/
SA
= 01 0. W K/ ta el -D R
100 0
0 50 100 150
S 303SS T eries T = 125C J
200
250
25 300
50
75
100
125
Average On-state Current (A)
Maximum Allowab le Ambient T emperature (C)
Fig. 3 - On-State Power Loss Characteristics
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Document Number: 94375 Revision: 30-Apr-08
ST303SPbF Series
Inverter Grade Thyristors (Stud Version), 300 A
Maximum Average On-state Power Loss (W) 900 800 700 600 500
400 300
Vishay High Power Products
DC 180 120 90 60 30
R
A= 0. 0. 03 01 K/ K/ W W 0. 06 -D K/ el W ta th S
0.1 2
R
RMSLimit
K/ W
Conduction Period
200 100 0 0
S 303SS T eries T = 125C J
0.2 K/ W 0.3 K/ W 0.5 K /W
25 50 100 150 200 250 300 350 400 450 500 Average On-state Current (A)
50
75
100
125
Maximum Allowab le Ambient T emperature (C)
Fig. 4 - On-State Power Loss Characteristics
Peak Half S Wave On-s ine tate Current (A)
7000 6500 6000 5500 5000 4500 4000 3500 3000 1
Instantaneous On-state Current (A)
At Any R ated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
10000
1000 T = 25C J T = 125C J S 303S S T eries 100
S 303S S T eries
10
100
1
2
3
4
5
6
7
8
Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N)
Instantaneous On-state Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control 7500 Of Conduc tion May Not Be Maintained. 7000 Initial T = 125C J No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 5500 5000 4500 4000 S 303SS T eries 3500 3000 0.01 0.1 Pulse T rain Duration (s) 1
T ransient T hermal Impedance Z thJC (K/ W)
Peak Half S Wave On-state Current (A) ine
8000
1 S teady S tate Value RthJC = 0.10 K/ W (DC Operation) 0.1
0.01 S 303SS T eries
0.001 0.001
0.01
0.1
1
10
S quare Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitve Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 94375 Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
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ST303SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 300 A
Maximum Reverse Recovery Charge - Qrr (C) Maximum R everse R overy Current - Irr (A) ec 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 S 303S S T eries T = 125 C J 180 160 140 120 100 80 60 40 20 10 S 303S S T eries T = 125 C J
IT = 500 A M 300 A 200 A 100 A 50 A
I
T M
= 500 A 300 A 200 A 100 A 50 A
20 30
40 50
60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ s)
Rate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
1E4
Pea k On-s tate Current (A)
1E3
1000 1500 2000
500
400 200 100
50 Hz
1000 500 400 200
100
50 Hz
1E2
2500
S nubb er circ uit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM S 303S S T eries S inusoida l pulse T = 40C C
1500
S nubber circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 303SS T eries S inusoidal pulse T = 65C C
tp
tp
1E1 1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Puls Basewidth (s) e
Puls Basewidth (s) e
Fig. 11 - Frequency Characteristics
1E4
Peak On-s tate Current (A)
1E3
500 1000 1500
400 200
100
50 Hz
400 500 1000 1500
200
100
50 Hz
1E2
2000 2500
S nub ber c ircuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM
S nub b er c ircuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 303SS T eries T p ezoida l pulse ra T = 65C C di/ d t = 50A/s
1E1
S 303SS T eries T ezoid al p ulse rap T = 40C C d i/ dt = 50A/ s
2000
1E0 1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
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Document Number: 94375 Revision: 30-Apr-08
ST303SPbF Series
Inverter Grade Thyristors (Stud Version), 300 A
1E4
Vishay High Power Products
Peak On-sta te Current (A)
1E3
500 1000
400
200 100
50 Hz
400 500 1000 200 100
50 Hz
1E2
1500 2000 2500
S nub ber circ uit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM S 303S S T eries T pezoid al p ulse ra T = 40C C di/ d t = 100A/ s
1500
S nubber c irc uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 303S S T eries T rapezoidal pulse T = 65C C di/ dt = 100A/ s
1E1
2000 tp
tp
1E0 1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Puls Basewidth (s) e
Fig. 13 - Frequency Characteristics
1E5
S 303SS T eries Rectangular pulse di/ dt = 50A/ s 20 joules per pulse 10 5 3 2 1 0.5
S 303SS T eries S inusoidal pulse
Peak On-state Current (A)
tp
1E4
3 5 10
20 joules p er pulse
1E3
0.5 0.4
2 1
1E2
0.4
tp
1E1 1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Puls Basewidth (s) e
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C T j=25 C T j=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 303SSeries T 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Document Number: 94375 Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
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ST303SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 300 A
ORDERING INFORMATION TABLE
Device code
ST
1
1 2 3 4 5 6 7 8 9
30
2 -
3
3
S
4
12
5
P
6
F
7
K
8
0
9
P
10
Thyristor Essential part number 3 = Fast turn-off S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base 3/4" 16UNF-2A Reapplied dV/dt code (for tq test condition) tq code 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) dV/dt - tq combinations available tq (s) up to 800 V tq (s) only for 1000/1200 V 20 FK dV/dt (V/s) 10 20 200 FN FK
10
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95080
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Document Number: 94375 Revision: 30-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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