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| TC3967 REV2_20080516 2 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES * * * * * * * * 2W Typical Output Power 13dB Typical Linear Power Gain at 2.45GHz High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO 15V Wg = 5 mm 100 % DC Tested Suitable for High Reliability Application Lost Cost Ceramic Package PHOTO ENLARGEMENT * DESCRIPTION The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.45 GHz) Symbol P1dB GL IP3 PAE IDS BVDGO Rth Linear Power Gain VDS = 8 V Intercept Point of the 3rd-order Intermodulation VDS = 8 V, *PSCL = 20 dBm Power Added Efficiency at 1dB Compression Power Drain-Source Current at VDS = 8 V Drain-Gate Breakdown Voltage at IDGO = 1.2mA Thermal Resistance 15 CONDITIONS Output Power at 1dB Gain Compression Point VDS = 8 V MIN 32 TYP 33 13 43 35 600 18 8 MAX UNIT dBm dB dBm % mA Volts C/W Note: *PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/2 TC3967 REV2_20080516 OUTLINE DIMENSIONS (in inch) 2 PLCS 2 PLCS 4 PLCS 4 PLCS 4 PLCS 4 SIDES Tape & Reel Package Orientation (mm) A TCXXXX XXXX TCXXXX XXXX TCXXXX XXXX TCXXXX B XXXX B A Section A-A Ao = 11.50 Bo = 7.50 Ko = 3.10 0.10 mm 0.10 mm 0.10 mm Section B-B Standard Reel Size Standard Reel Quantity 7" 400 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/2 |
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