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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2400 DESCRIPTION With TO-220F package Complement to type 2SB1569 High transition frequency Collector power dissipation: PC=20W(TC=25ae ) APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 120 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 5 1.5 3 Ta=25ae 2.0 Emitter-base voltage Collector current Collector current-peak Open collector Fig.1 simplified outline (TO-220F) and symbol UNIT V V V A A PC Collector dissipation TC=25ae 20 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA ;IB=0 IC=50|I IE=50|I A ;IE=0 A ;IC=0 MIN 120 120 5 2SD2400 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V V IC=1A ;IB=0.1A IC=1A ;IB=0.1A VCB=120V; IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V 60 2.0 1.5 1.0 1.0 |I |I V V A A hFE Classifications D 60-120 E 100-200 NDU ICO E SEM ANG INCH Transition frequency IC=0.1A ; VCE=5V;f=30MHz IE=0; VCB=10V; f=1MHz Collector output capacitance TOR 80 20 320 MHz pF F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2400 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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