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| S T U/D421S S amHop Microelectronics C orp. Aug.20,2006 P -C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -40V F E AT UR E S ( m W ) Max ID -10A R DS (ON) S uper high dense cell design for low R DS (ON). 45 @ V G S = -10V 60 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a (TA=25 C unles s otherwis e noted) S ymbol VDS VGS Limit -40 20 -10 -8.3 -50 -10 50 35 -55 to 175 W C Unit V V A A A A 25 C 70 C ID IDM IS PD TJ, TS TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D421S P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = -250uA VDS = -32V, VGS= 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250uA VGS =-10V, ID= -10A VGS =-4.5V, ID = -6A VDS =-5V, VGS = -10V VDS = -10V, ID = -10A Min Typ C Max Unit -40 1 V uA 100 nA -1.0 -1.7 34 47 30 11 900 135 85 3.5 12 15 45 26 17 8 1.8 5 -3.0 45 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =-20V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = -24V ID = -10 A VGS = -10V R GE N = 3.3 ohm VDS =-24V, ID =-10A,VGS =-10V VDS =-24V, ID =-10A,VGS =-4.5V ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd ns ns ns ns nC nC nC nC VDS =-24V, ID = -16A VGS =-10V 2 S T U/D421S E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = -10A Min Typ Max Unit -0.91 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 30 V G S =-10V V G S =-8V 20 V G S =-4.5V 16 -55 C -ID, Drain C urrent(A) 24 18 ID, Drain C urrent (A) V G S =-3.5V 12 25 C 8 12 V G S =-3V 6 0 4 0 T j=125 C 0 0.6 1.8 2.4 3.2 4.0 4.8 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 120 1.5 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 100 1.4 1.3 1.2 1.1 1.0 0.0 V G S =-4.5V ID=-6A R DS (on) (m W) 80 V G S =-4.5V 60 40 20 1 V G S =-10V V G S =-10V ID=-10A 1 6 12 18 24 30 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D421S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.27 ID=-250uA 1.18 1.09 1.00 0.91 0.82 0.73 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 180 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=-10A Is , S ource-drain current (A) 150 10.0 5.0 125 C R DS (on) (m W) 120 90 60 30 0 75 C 25 C 25 C 125 C 75 C 1.0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D421S 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =-24V ID=-10A C is s 1000 C , C apacitance (pF ) 800 600 400 C os s 200 0 C rs s 0 5 10 15 20 25 30 6 0 3 6 9 12 16 18 21 24 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 S witching T ime (ns ) ID, Drain C urrent (A) Tf 60 10 RD S 100 60 10 TD(off) ( ) ON L im it 10 ms Tr TD(on) 10 DC 0m s 1 1s 1 1 VDS=-24V,ID=-10A VGS=-10V 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 2 F igure 12. Maximum S afe O perating Area r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D421S 6 S T U/D421S 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S T U/D421S TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
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