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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz) Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC ICP CollectorPower Dissipation Junotion Temperature storage Temperature *1 Single pulse pw=10ms *2 When mounted on a 40X40X0.7 mm ceramic board. PC TJ Tstg Rating 120 120 5 2 3 0.5 2 150 -55 to 150 Unit V V V A A *1 W *2 W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter out current Emitter-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob IC=50iA IC=1mA IE=50iA VCB=100V VEB=4V IC/IB=1A/0.1A VCE/IC=5V/0.1A VCE=5V.IE=-0.1A,f=30MHz VCB=10V,IE=0A,f=1MHz 82 80 20 Testconditons Min 120 120 5 1 1 0.4 390 MHz pF Typ Max Unit V V V iA iA V hFE Classification TYPE Rank Marking CBP P 82 to 180 CBQ Q 120 to 270 CBR R 180 to390 www.kexin.com.cn 1 |
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