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| SMD Type Silicon NPN Epitaxial 2SD1368 Transistors Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP *1 PC *2 Tj Tstg Rating 100 50 6 1 1.5 1 150 -55 to +150 Unit V V V A A W *2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min 100 50 6 0.1 0.1 100 500 0.3 1.2 100 20 V V MHz pF Typ Max Unit V V V iA iA V(BR)CBO IC = 10 iA, IE = 0 V(BR)CEO IC = 1 mA, RBE = V(BR)EBO IE = 10 iA, IC = 0 ICBO IEBO hFE VCB = 80 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V,IC = 0.1 A VCE(sat) IC = 1 A,IB = 0.1 A VBE(sat) IC = 1 A,IB = 0.1 A fT Cob VCE = 2 V,IC = 10 mA VCB = 10 V, IE = 0,f = 1 MHz hFE Classification Marking hFE CA 100 200 CB 160 320 CC 250 500 www.kexin.com.cn 1 |
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