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| SMD Type Silicon N-Channel MOSFET 2SK2715 IC MOSFET Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.1 0.80-0.1 +0.15 0.50-0.15 Easy to parallel. 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 500 30 2 6 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS VGS(th) Yfs Testconditons ID=1mA,VGS=0V VDS=500V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=1A 2.0 0.6 1.5 3.0 280 VDS=10V,VGS=0,f=1MHZ 58 23 10 ID=1A,VGS(on)=10V,RG=10 ,RL=150 ,VDD=150V 12 30 63 4.0 pF pF pF ns ns ns ns Min 500 100 100 4.0 Typ Max Unit V A nA V S RDS(on) VGS=10V,ID=1A Ciss Coss Crss ton tr toff tf 3.80 Easily designed drive circuits. www.kexin.com.cn 1 |
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