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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor DESCRIPTION *DC Current Gain: hFE= 40(Min)@ IC= -150mA *Complement to Type BD933/935/937/939/941 APPLICATIONS *Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BD934 BD936 VCBO Collector-Base Voltage BD938 BD940 BD942 BD934 BD936 VCEO Collector-Emitter Voltage BD938 BD940 BD942 VEBO IC ICM IB B BD934/936/938/940/942 VALUE -45 -60 -100 -120 -140 -45 -60 -80 -100 -120 -5 -3 -7 -0.5 30 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.17 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BD934 BD936 VCEO(SUS) Collector-Emitter Sustaining Voltage BD938 BD940 BD942 VCE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= -1A; IB= -0.1A B BD934/936/938/940/942 CONDITIONS MIN -45 -60 TYP. MAX UNIT IC= -100mA ; IB= 0 -80 -100 -120 -0.6 -1.3 -0.05 -1 -0.1 -0.2 40 25 3 250 V V V mA mA mA IC= -1A; VCE= -2V VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150 VCE= VCEOmax; IB= 0 VEB= -5V; IC= 0 IC= -150mA ; VCE= -2V IC= -1A ; VCE= -2V IC= -250mA ; VCE= -10V MHz Switching Times ton toff Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A Turn-Off Time 0.7 2.4 s 0.2 0.6 s isc Websitewww.iscsemi.cn 2 |
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