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| PD- 95032 SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l IRF7457PBF HEXFET(R) Power MOSFET VDSS 20V RDS(on) max 7.0m ID 15A High Frequency Buck Converters for Computer Processor Power Lead-Free 1 2 3 4 8 7 Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current S S S G A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 20 20 15 12 120 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/C C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W Notes through are on page 8 www.irf.com 1 10/12/04 IRF7457PBF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.023 5.5 8.0 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 7.0 VGS = 10V, ID = 15A m 10.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 28 11 10 25 14 16 16 7.5 3100 1600 270 Max. Units Conditions --- S VDS = 16V, ID = 12A 42 ID = 12A 17 nC VDS = 10V 15 VGS = 4.5V, 38 VGS = 0V, VDS = 10V --- VDD = 10V, --- ID = 12A ns --- R G = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 265 15 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- --- --- 2.5 A 120 1.3 --- 75 105 75 110 V ns nC ns nC --- 0.8 --- 0.67 --- 50 --- 70 --- 50 --- 74 VSD trr Qrr trr Qrr 2 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 125C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VR= 15V di/dt = 100A/s TJ = 125C, IF = 12A, VR=15V di/dt = 100A/s www.irf.com IRF7457PBF 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 2.7V 10 10 2.7V 20s PULSE WIDTH TJ = 150 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 VDS , Drain-to-Source Voltage (V) 1 0.1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 15A I D , Drain-to-Source Current (A) 100 1.5 TJ = 150 C 10 1.0 TJ = 25 C 1 0.5 0.1 2.5 V DS = 15V 20s PULSE WIDTH 3.0 3.5 4.0 4.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7457PBF 5000 4000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 12A VDS = 10V 8 C, Capacitance (pF) 3000 Ciss 6 2000 Coss 4 1000 2 Crss 0 1 10 100 0 0 10 20 30 40 50 60 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 150 C 10 10us 100 100us TJ = 25 C 1 1ms 10 10ms 0.1 0.2 VGS = 0 V 0.8 1.4 2.0 2.6 VSD ,Source-to-Drain Voltage (V) 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7457PBF 16 VDS V GS RD 13 ID , Drain Current (A) RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + - VDD 10 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t2 0.01 0.00001 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7457PBF R DS ( on ) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to -Source On Resistance () 0.030 0.025 VGS = 4.5V 0.020 0.015 0.010 0.005 0.000 0 20 40 60 80 100 120 ID , Drain Current ( A ) 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 3.0 3.5 4.0 4.5 5.0 5.5 ID = 15A VGS = 10V VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 14. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD VGS 3mA EAS , Single Pulse Avalanche Energy (mJ) VG 700 600 500 400 300 200 100 0 TOP BOTTOM Charge IG ID ID 5.4A 9.6A 12A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp VDS L DRIVER RG 20V D.U.T IAS + V - DD 25 A I AS tp 0.01 Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7457PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A C 0.10 [.004] y K x 45 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 www.irf.com 7 IRF7457PBF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 3.7mH RG = 25, IAS = 12A. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 8 www.irf.com |
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