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Si1032R/X
Vishay Siliconix
N-Channel 1.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 5 at VGS = 4.5 V 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50
FEATURES
* * * * * * * Halogen-free Option Available Low-Side Switching Low On-Resistance: 5 Low Threshold: 0.9 V (typ.) Fast Switching Speed: 35 ns TrenchFET(R) Power MOSFETs: 1.5-V Rated 2000 V ESD Protection
RoHS
COMPLIANT
BENEFITS
* * * * * Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
SC-75A or SC-89
G 1
APPLICATIONS
3 D
S
2 Marking Code: G Top View
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers
Ordering Information: SI1032R-T1-E3 (SC-75A, Lead (Pb)-free) Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-E3 (SC-89, Lead (Pb)-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Si1032R Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current
a
Si1032X 5s Steady State Unit V 210 150 600 200 250 130 - 55 to 150 2000 300 340 170 240 300 150 mW C V 200 140 mA 20 6
Symbol VDS VGS TA = 25 C TA = 85 C ID IDM IS PD TJ, Tstg ESD
5s
Steady State
200 110 500 250 280 145
140 100
Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa for SC-75 TA = 25 C TA = 85 C
Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board.
Document Number: 71172 S-81543-Rev. E, 07-Jul-08
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Si1032R/X
Vishay Siliconix
SPECIFICATIONS TA = 25 C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
a
Symbol VGS(th) IGSS IDSS ID(on)
Test Conditions VDS = VGS, ID = 250 A VDS = 0 V, VGS = 2.8 V VDS = 0 V, VGS = 4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 200 mA VGS = 2.5 V, ID = 175 mA VGS = 1.8 V, ID = 150 mA VGS = 1.5 V, ID = 40 mA VDS = 10 V, ID = 200 mA IS = 150 mA, VGS = 0 V
Min. 0.40
Typ. 0.7 0.5 1.0
Max. 1.2 1.0 3.0 1 10
Unit V
A
250 5 7 9 10 0.5 1.2 750
mA
Drain-Source On-State Resistancea
RDS(on)
Forward
Transconductancea
gfs VSD Qg Qgs Qgd td(on) tr td(off) tf
S V
Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
75 225 50
pC
VDD = 10 V, RL = 47 ID 200 mA, VGEN = 4.5 V, RG = 10
25 50 25
ns
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
0.5 VGS = 5 thru 1.8 V 0.4 ID - Drain Current (mA) ID - Drain Current (A) 600 TJ = - 55 C 500 25 C 125 C
400
0.3
300
0.2
200
0.1 1V 0.0 0 1 2 3 4 5 6
100
0 0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 71172 S-81543-Rev. E, 07-Jul-08
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS
50
TA = 25 C, unless otherwise noted
100 VGS = 0 V f = 1 MHz
RDS(on) - On-Resistance ()
40 C - Capacitance (pF)
80 Ciss 60
30
20 VGS = 1.8 V 10 VGS = 2.5 V 0 0 50 100 150 VGS = 4.5 V 200 250
40 Coss
20
0 0
Crss 4 8 12 16 20
ID - Drain Current (mA)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5 VDS = 10 V ID = 150 mA 4 R DS(on) - On-Resistance (Normalized) 1.40 1.60
Capacitance
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V ID = 200 mA 1.20 VGS = 1.8 V ID = 175 mA
3
2
1.00
1
0.80
0 0.0
0.2
0.4
0.6
0.8
0.60 - 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (C)
Gate Charge
1000 TJ = 125 C R DS(on) - On-Resistance () 40 I S - Source Current (mA) 50
On-Resistance vs. Junction Temperature
100 TJ = 25 C
ID = 200 mA 30
10
TJ = 50 C
20 ID = 175 mA 10
1 0.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - S ource-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Surge-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71172 S-81543-Rev. E, 07-Jul-08
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Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
0.3 3.0
0.2 ID = 0.25 mA V GS(th) Variance (V) 0.1 IGSS - (A)
2.5
2.0
0.0
1.5
- 0.1
1.0 VGS = 2.8 V
- 0.2
0.5
- 0.3 - 50
- 25
0
25
50
75
100
125
0.0 - 50
- 25
0
25
50
75
100
125
TJ - Temperature (C)
TJ - Temperature (C)
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50
IGSS vs. Temperature
- 25
0
25
50
75
100
125
TJ - Temperature (C)
BVGSS vs. Temperature
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 500 C/W
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71172.
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Document Number: 71172 S-81543-Rev. E, 07-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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