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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION With TO-220Fa package Complement to type 2SD1480 Low collector saturation voltage APPLICATIONS For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CONDITIONS Open emitter Collector-base voltage Collector -emitter voltage IN Emitter-base voltage Collector current HAN C SEM GE Open base Ta=25ae OND IC TOR UC VALUE -60 -60 -6 -2 -4 2.0 UNIT V V V A A Open collector Collector current-peak PC Collector power dissipation TC=25ae 25 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA; IB=0 IC=-2A ;IB=-0.2A IC=-1A ; VCE=-4V VCE=-60V; VBE=0 VCE=-30V; IB=0 VEB=-6V; IC=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V 35 40 MIN -60 2SB1052 SYMBOL V(BR)CEO VCEsat VBE ICES ICEO IEBO hFE-1 hFE-2 TYP. MAX UNIT V -2.0 -1.2 -0.2 -0.3 -1.0 V V mA mA mA Switching times ton tstg tf 250 Turn-on time Storage time Fall time HAN INC Q 70-150 P 120-250 SEM GE IC=-1A ;IB1=-IB2=-0.1A OND IC TOR UC 0.1 |I |I |I 1.5 0.3 s s s hFE-2 Classifications R 40-90 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1052 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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