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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1941 DESCRIPTION *With TO-3PML package *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *Color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 6 3 50 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1941 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 600 V VCEsat VBEsat Collector-emitter saturation voltage IC=5A ;IB=1A IC=5A ;IB=1A 3.0 5.0 V Base-emitter saturation voltage 1.5 V A ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 36 hFE-2 DC current gain IC=5A ; VCE=5V 5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1941 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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