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| HAT1139H Silicon P Channel Power MOS FET Power Switching REJ03G1244-0200 Rev.2.00 Jun.22.2005 Features * * * * Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 m typ. (at VGS = -10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 D 5 D 3 12 4 2 G 3 G 1, 4 Source 2, 3 Gate 5 Drain S 1 S 4 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation : Tc = 25C 3. 2 Drive operation : Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Note2 Pch Note3 Tch Tstg Note1 Ratings -30 -25 / +20 -30 -120 -30 15 30 150 -55 to +150 Unit V V A A A W W C C Rev.2.00 Jun. 22, 2005, page 1 of 6 HAT1139H Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min -30 -- -- -1.0 -- -- 27 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 7.0 10.0 45 3200 720 550 73 8 14 23 48 247 186 -0.91 185 Max -- 0.1 -1 -2.5 9.0 14.5 -- -- -- -- -- -- -- -- -- -- -- -1.19 -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 VGS = -20/+10 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA ID = -15 A, VGS = -10 V Note4 ID = -15 A, VGS = -4.5 V Note4 ID = -15 A, VDS = -10 V Note4 VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, VGS = -10 V, ID = -30 A VGS = -10 V, ID = -15 A, VDD -10 V, RL = 0.67 , Rg = 4.7 IF = -30 A, VGS = 0 Note4 IF = -30 A, VGS = 0 diF/ dt = 100 A/ s Rev.2.00 Jun. 22, 2005, page 2 of 6 HAT1139H Main Characteristics Power vs. Temperature Derating 40 -1000 -100 -10 -1.0 -0.1 -0.01 DC PW Maximum Safe Operation Area Pch (W) 10 =1 ID (A) 30 2 iv Dr e 1m 0m s 10 Channel Dissipation Op s 0 s s era tio 20 1D riv eO Drain Current n( PW pe O rat pe ra ion <1 10 Operation in this area is limited by R DS(on) 0s ) tio n 0 50 100 150 200 Tc = 25C 1 shot Pulse -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Typical Output Characteristics -50 -3.4 V -4.5 V -3.2 V -3.1 V Typical Transfer Characteristics -50 VDS = -10 V Pulse Test (A) ID ID Drain Current -2.9 V (A) -40 -10 V -3.0 V -40 -30 -2.8 V -30 Drain Current -20 -2.7 V -2.6 V -20 Tc = 75C -10 25C -1 -2 -25C -10 VGS = -2.5 V Pulse Test 0 -2 -4 -6 -8 -10 0 -3 -4 -5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage VDS(on) (V) -0.4 Pulse Test Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (m) 100 Pulse Test 50 VGS = -4.5 V -0.3 Drain to Source Voltage 20 10 -0.2 ID = -15 A -0.1 -10 A -5 A 0 0 -4 -8 -12 -16 -20 -10 V 5 2 1 -1 -10 -100 -1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Jun. 22, 2005, page 3 of 6 HAT1139H Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 20 Pulse Test 16 ID = -5 A, -10 A, -15 A VGS = -4.5 V 100 Tc = -25C 10 25C 75C 1 Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance vs. Drain Current 12 8 -5 A, -10 A, -15 A -10 V 4 V DS = -10 V Pulse Test 0.1 -0.1 -0.3 -1 -3 -10 -30 -100 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 1000 10000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) Ciss 100 1000 Coss Crss VGS = 0 f = 1 MHz 100 di/dt = 100 A/s VGS = 0, Ta = 25C 10 -0.1 -1 -10 -100 0 -5 -10 -15 -20 -25 -30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) VDD = -5 V -10 V -25 V ID = -30 A -4 Switching Characteristics VGS (V) 0 1000 td(off) 0 -10 Switching Time t (ns) Gate to Source Voltage 100 tf -20 VDS -30 VDD = -5 V -10 V -25 V 0 40 80 -8 td(on) 10 tr VGS = -10 V , VDS = -10 V Rg = 4.7 , duty < 1 % 1 -0.1 -1 -10 -100 -12 VGS 120 160 -16 200 -40 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Jun. 22, 2005, page 4 of 6 HAT1139H Reverse Drain Current vs. Source to Drain Voltage -50 Reverse Drain Current IDR (A) -40 -10 V -30 -5 V -20 VGS = 0 V, 5 V -10 Pulse Test 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 10 D=1 1 0.5 0.2 0.1 0.1 0.05 t ho 1s lse pu 0.01 0.02 0.01 ch - c(t) = s (t) * ch - c * ch - c = 8.33C/ W, Tc = 25C PDM PW T D= PW T 0.001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 4.7 Vin -10 V V DD = -10 V Vout td(on) 90% 10% tr td(off) 90% 90% 10% tf Vout Monitor Vin 10% Waveform Rev.2.00 Jun. 22, 2005, page 5 of 6 HAT1139H Package Dimensions JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Package Name LFPAK MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 0.2 5 0.25 -0.03 +0.05 3.3 1.0 3.95 1 4 6.1 -0.3 +0.1 0 - 8 1.1 Max +0.03 0.07 -0.04 0.75 Max 1.27 0.10 0.40 0.06 0.25 M 0.6 -0.20 1.3 Max +0.25 0.20 -0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part Name HAT1139H-EL-E Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jun. 22, 2005, page 6 of 6 4.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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